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Title: Magnetic quantum phase transition in Cr-doped Bi2(SexTe1-x)3 driven by the Stark effect

Abstract

The interplay between magnetism and topology, as exemplified in the magnetic skyrmion systems, has emerged as a rich playground for finding novel quantum phenomena and applications in future information technology. Magnetic topological insulators (TI) have attracted much recent attention, especially after the experimental realization of quantum anomalous Hall effect. Future applications of magnetic TI hinge on the accurate manipulation of magnetism and topology by external perturbations, preferably with a gate electric field. In this work, we investigate the magneto transport properties of Cr doped Bi2(SexTe1-x)3 TI across the topological quantum critical point (QCP). We find that the external gate voltage has negligible effect on the magnetic order for samples far away from the topological QCP. However, for the sample near the QCP, we observe a ferromagnetic (FM) to paramagnetic (PM) phase transition driven by the gate electric field. Theoretical calculations show that a perpendicular electric field causes a shift of electronic energy levels due to the Stark effect, which induces a topological quantum phase transition and consequently a magnetic phase transition. Finally, the in situ electrical control of the topological and magnetic properties of TI shed important new lights on future topological electronic or spintronic device applications.

Authors:
 [1];  [1]; ORCiD logo [2];  [3];  [1];  [1];  [1];  [1];  [1];  [4];  [5];  [5];  [5];  [5]
+ Show Author Affiliations
  1. Tsinghua Univ., Beijing (China). State Key Lab. of Low Dimensional Quantum Physics, Dept. of Physics
  2. Fudan Univ., Shanghai (China). State Key Lab. of Surface Physics, Dept. of Physics; Stanford Univ., CA (United States). Dept. of Physics
  3. Stanford Univ., CA (United States). Dept. of Physics
  4. Stanford Univ., CA (United States). Dept. of Physics; Collaborative Innovation Center of Quantum Matter, Beijing (China)
  5. Tsinghua Univ., Beijing (China). State Key Lab. of Low Dimensional Quantum Physics, Dept. of Physics; Collaborative Innovation Center of Quantum Matter, Beijing (China)
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1407490
Alternate Identifier(s):
OSTI ID: 1418319
Grant/Contract Number:  
AC02-76SF00515
Resource Type:
Accepted Manuscript
Journal Name:
Nature Nanotechnology
Additional Journal Information:
Journal Volume: 12; Journal Issue: 10; Journal ID: ISSN 1748-3387
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; surfaces, interfaces and thin films; topological insulators

Citation Formats

Zhang, Zuocheng, Feng, Xiao, Wang, Jing, Lian, Biao, Zhang, Jinsong, Chang, Cuizu, Guo, Minghua, Ou, Yunbo, Feng, Yang, Zhang, Shou-Cheng, He, Ke, Ma, Xucun, Xue, Qi-Kun, and Wang, Yayu. Magnetic quantum phase transition in Cr-doped Bi2(SexTe1-x)3 driven by the Stark effect. United States: N. p., 2017. Web. doi:10.1038/nnano.2017.149.
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Zhang, Zuocheng, Feng, Xiao, Wang, Jing, Lian, Biao, Zhang, Jinsong, Chang, Cuizu, Guo, Minghua, Ou, Yunbo, Feng, Yang, Zhang, Shou-Cheng, He, Ke, Ma, Xucun, Xue, Qi-Kun, & Wang, Yayu. Magnetic quantum phase transition in Cr-doped Bi2(SexTe1-x)3 driven by the Stark effect. United States. https://doi.org/10.1038/nnano.2017.149
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Zhang, Zuocheng, Feng, Xiao, Wang, Jing, Lian, Biao, Zhang, Jinsong, Chang, Cuizu, Guo, Minghua, Ou, Yunbo, Feng, Yang, Zhang, Shou-Cheng, He, Ke, Ma, Xucun, Xue, Qi-Kun, and Wang, Yayu. Mon . "Magnetic quantum phase transition in Cr-doped Bi2(SexTe1-x)3 driven by the Stark effect". United States. https://doi.org/10.1038/nnano.2017.149. https://www.osti.gov/servlets/purl/1407490.
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@article{osti_1407490,
title = {Magnetic quantum phase transition in Cr-doped Bi2(SexTe1-x)3 driven by the Stark effect},
author = {Zhang, Zuocheng and Feng, Xiao and Wang, Jing and Lian, Biao and Zhang, Jinsong and Chang, Cuizu and Guo, Minghua and Ou, Yunbo and Feng, Yang and Zhang, Shou-Cheng and He, Ke and Ma, Xucun and Xue, Qi-Kun and Wang, Yayu},
abstractNote = {The interplay between magnetism and topology, as exemplified in the magnetic skyrmion systems, has emerged as a rich playground for finding novel quantum phenomena and applications in future information technology. Magnetic topological insulators (TI) have attracted much recent attention, especially after the experimental realization of quantum anomalous Hall effect. Future applications of magnetic TI hinge on the accurate manipulation of magnetism and topology by external perturbations, preferably with a gate electric field. In this work, we investigate the magneto transport properties of Cr doped Bi2(SexTe1-x)3 TI across the topological quantum critical point (QCP). We find that the external gate voltage has negligible effect on the magnetic order for samples far away from the topological QCP. However, for the sample near the QCP, we observe a ferromagnetic (FM) to paramagnetic (PM) phase transition driven by the gate electric field. Theoretical calculations show that a perpendicular electric field causes a shift of electronic energy levels due to the Stark effect, which induces a topological quantum phase transition and consequently a magnetic phase transition. Finally, the in situ electrical control of the topological and magnetic properties of TI shed important new lights on future topological electronic or spintronic device applications.},
doi = {10.1038/nnano.2017.149},
journal = {Nature Nanotechnology},
number = 10,
volume = 12,
place = {United States},
year = {Mon Aug 07 00:00:00 EDT 2017},
month = {Mon Aug 07 00:00:00 EDT 2017}
}
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Journal Article:
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Publisher's Version of Record
https://doi.org/10.1038/nnano.2017.149
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Cited by: 14 works
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Figures / Tables:

Figure 1 Figure 1: Experimental setup and materials characterization. a, Schematic drawing of a 8 QL (Bi0.89Cr0.11)2(SexTe1-x)3 film grown on the SrTiO3 substrate and fabricated into a field effect transistor device with a bottom gate. 20 nm amorphous Te is used for a capping layer. b, The AHE of 8QL (Bi0.89Cr0.11)2Te3 showsmore » square-shaped hysteresis at T = 1.5 K, which becomes smaller with increasing Se content and finally disappears at x = 0.67. The AHE curves become reversible with further increasing Se content to x = 1. c, ARPES band map of the x = 0.67 sample shows that the bulk conduction and valence bands almost touch each other, indicating the close proximity to a topological QCP. The Fermi level lies deep in the bulk conduction band due to the existence of electron type bulk carriers.« less
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    Works referencing / citing this record:

    Reversible and nonvolatile manipulation of the electronic transport properties of topological insulators by ferroelectric polarization switching
    journal, October 2018

    Strong room-temperature ferromagnetism in VSe2 monolayers on van der Waals substrates
    journal, February 2018

    Tuning topology in thin films of topological insulators by strain gradients
    journal, September 2019

    Quantized Field-Effect Tunneling between Topological Edge or Interface States
    journal, November 2019

    Tuning topology in thin films of topological insulators by strain gradients
    text, January 2019

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