Vertical Hole Transport and Carrier Localization in InAs / InAs 1 − x Sb x Type-II Superlattice Heterojunction Bipolar Transistors

Olson, B. V.; Klem, J. F.; Kadlec, E. A.; Kim, J. K.; Goldflam, M. D.; Hawkins, S. D.; Tauke-Pedretti, A.; Coon, W. T.; Fortune, T. R.; Shaner, E. A.; Flatté, M. E.

doi:10.1103/PhysRevApplied.7.024016

Title: Vertical Hole Transport and Carrier Localization in $InAs / {InAs}_{1 - x} {Sb}_{x}$ Type-II Superlattice Heterojunction Bipolar Transistors

Authors:: Olson, B. V.; Klem, J. F.; Kadlec, E. A.; Kim, J. K.; Goldflam, M. D.; Hawkins, S. D.; Tauke-Pedretti, A.; Coon, W. T.; Fortune, T. R.; Shaner, E. A.; Flatté, M. E.

Publication Date:: Mon Feb 13 00:00:00 EST 2017

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1343638

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review Applied

Additional Journal Information:: Journal Name: Physical Review Applied Journal Volume: 7 Journal Issue: 2; Journal ID: ISSN 2331-7019

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Olson, B. V., Klem, J. F., Kadlec, E. A., Kim, J. K., Goldflam, M. D., Hawkins, S. D., Tauke-Pedretti, A., Coon, W. T., Fortune, T. R., Shaner, E. A., and Flatté, M. E. Vertical Hole Transport and Carrier Localization in InAs / InAs 1 − x Sb x Type-II Superlattice Heterojunction Bipolar Transistors.  United States: N. p., 2017. 
Web.  doi:10.1103/PhysRevApplied.7.024016.

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                    Olson, B. V., Klem, J. F., Kadlec, E. A., Kim, J. K., Goldflam, M. D., Hawkins, S. D., Tauke-Pedretti, A., Coon, W. T., Fortune, T. R., Shaner, E. A., & Flatté, M. E. Vertical Hole Transport and Carrier Localization in InAs / InAs 1 − x Sb x Type-II Superlattice Heterojunction Bipolar Transistors.  United States.  https://doi.org/10.1103/PhysRevApplied.7.024016

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                    Olson, B. V., Klem, J. F., Kadlec, E. A., Kim, J. K., Goldflam, M. D., Hawkins, S. D., Tauke-Pedretti, A., Coon, W. T., Fortune, T. R., Shaner, E. A., and Flatté, M. E. Mon .  
"Vertical Hole Transport and Carrier Localization in InAs / InAs 1 − x Sb x Type-II Superlattice Heterojunction Bipolar Transistors".  United States.  https://doi.org/10.1103/PhysRevApplied.7.024016.

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@article{osti_1343638,

  title        = {Vertical Hole Transport and Carrier Localization in InAs / InAs 1 − x Sb x Type-II Superlattice Heterojunction Bipolar Transistors},

  author       = {Olson, B. V. and Klem, J. F. and Kadlec, E. A. and Kim, J. K. and Goldflam, M. D. and Hawkins, S. D. and Tauke-Pedretti, A. and Coon, W. T. and Fortune, T. R. and Shaner, E. A. and Flatté, M. E.},

  abstractNote = {},

  doi          = {10.1103/PhysRevApplied.7.024016},

  journal      = {Physical Review Applied},

  number       = 2,

  volume       = 7,

  place        = {United States},

  year         = {Mon Feb 13 00:00:00 EST 2017},

  month        = {Mon Feb 13 00:00:00 EST 2017}

}

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Similar Records

Title: Vertical Hole Transport and Carrier Localization in InAs / InAs 1 − x Sb x Type-II Superlattice Heterojunction Bipolar Transistors

Citation Formats

Influence of miniband widths and interface disorder on vertical transport in superlattices journal, April 1993

nBn detector, an infrared detector with reduced dark current and higher operating temperature journal, October 2006

Observation of Carrier Localization in Intentionally Disordered Gaas/Gaalas Superlattices journal, September 1986

Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices journal, December 2015

Intensity- and Temperature-Dependent Carrier Recombination in InAs / In As 1 − x S b x Type-II Superlattices journal, April 2015

Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors journal, February 2015

Superlattice and Negative Differential Conductivity in Semiconductors journal, January 1970

Proposal for measuring anisotropic diffusivity of minority carriers in semiconductor layer structures by means of photoluminescence experiments under interference conditions journal, March 1998

Photoluminescence of disorder-induced localized states in GaAs/ Al x Ga 1 − x As superlattices journal, April 1989

Defect states in type-II strained-layer superlattices conference, January 2010

Demonstration of interface-scattering-limited electron mobilities in InAs∕GaSb superlattices journal, February 2007

Influence of carrier localization on minority carrier lifetime in InAs/InAsSb type-II superlattices journal, November 2015

Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice journal, August 2012

Bloch transport of electrons and holes in superlattice minibands: Direct measurement by subpicosecond luminescence spectroscopy journal, June 1987

Monolayer-by-monolayer compositional analysis of InAs/InAsSb superlattices with cross-sectional STM journal, September 2015

Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applications journal, September 1986

All-optical measurement of vertical charge carrier transport in mid-wave infrared InAs/GaSb type-II superlattices journal, May 2013

Electronic Transport in Amorphous Silicon Films journal, August 1970

Model for the Electronic Structure of Amorphous Semiconductors journal, April 1975

Fundamentals of Semiconductors: Physics and Materials Properties book, January 2005

Hopping mobility in semiconductor superlattices journal, January 1985

Optical studies of perpendicular transport in semiconductor superlattices journal, January 1988

Direct measurement of heavy-hole exciton transport in type-II GaAs/AlAs superlattices journal, November 1993

Anderson localization and Monte Carlo simulation of vertical transport in disordered finite superlattices journal, November 1997

Conduction- and Valence-Band Energies in Bulk InAs1−x Sb x and Type II InAs1−x Sb x /InAs Strained-Layer Superlattices journal, March 2013

Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy in InAs / In ( As , Sb ) Type-II Superlattices journal, May 2016

Title: Vertical Hole Transport and Carrier Localization in $InAs / {InAs}_{1 - x} {Sb}_{x}$ Type-II Superlattice Heterojunction Bipolar Transistors

Influence of miniband widths and interface disorder on vertical transport in superlattices
journal, April 1993

nBn detector, an infrared detector with reduced dark current and higher operating temperature
journal, October 2006

Observation of Carrier Localization in Intentionally Disordered Gaas/Gaalas Superlattices
journal, September 1986

Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices
journal, December 2015

Intensity- and Temperature-Dependent Carrier Recombination in $InAs / In {As}_{1 - x} {S b}_{x}$ Type-II Superlattices
journal, April 2015

Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors
journal, February 2015

Superlattice and Negative Differential Conductivity in Semiconductors
journal, January 1970

Proposal for measuring anisotropic diffusivity of minority carriers in semiconductor layer structures by means of photoluminescence experiments under interference conditions
journal, March 1998

Photoluminescence of disorder-induced localized states in GaAs/ ${Al}_{x}$ ${Ga}_{1 - x}$ As superlattices
journal, April 1989

Defect states in type-II strained-layer superlattices
conference, January 2010

Demonstration of interface-scattering-limited electron mobilities in InAs∕GaSb superlattices
journal, February 2007

Influence of carrier localization on minority carrier lifetime in InAs/InAsSb type-II superlattices
journal, November 2015

Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice
journal, August 2012

Bloch transport of electrons and holes in superlattice minibands: Direct measurement by subpicosecond luminescence spectroscopy
journal, June 1987

Monolayer-by-monolayer compositional analysis of InAs/InAsSb superlattices with cross-sectional STM
journal, September 2015

Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applications
journal, September 1986

All-optical measurement of vertical charge carrier transport in mid-wave infrared InAs/GaSb type-II superlattices
journal, May 2013

Electronic Transport in Amorphous Silicon Films
journal, August 1970

Model for the Electronic Structure of Amorphous Semiconductors
journal, April 1975

Fundamentals of Semiconductors: Physics and Materials Properties
book, January 2005

Hopping mobility in semiconductor superlattices
journal, January 1985

Optical studies of perpendicular transport in semiconductor superlattices
journal, January 1988

Direct measurement of heavy-hole exciton transport in type-II GaAs/AlAs superlattices
journal, November 1993

Anderson localization and Monte Carlo simulation of vertical transport in disordered finite superlattices
journal, November 1997

Conduction- and Valence-Band Energies in Bulk InAs1−x Sb x and Type II InAs1−x Sb x /InAs Strained-Layer Superlattices
journal, March 2013

Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy in $InAs / In (As, Sb)$ Type-II Superlattices
journal, May 2016