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This content will become publicly available on November 11, 2017

Title: Carrier localization effects in GaAs1−xSbx/GaAs heterostructures

Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85281, USA
Publication Date:
OSTI Identifier:
1331827
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 120; Journal Issue: 18; Related Information: CHORUS Timestamp: 2016-11-11 13:05:21; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English