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Title: Review—hexagonal boron nitride epilayers: Growth, optical properties and device applications

This paper provides a brief overview on recent advances made in authors’ laboratory in epitaxial growth and optical studies of hexagonal boron nitride (h-BN) epilayers and heterostructures. Photoluminescence spectroscopy has been employed to probe the optical properties of h-BN. It was observed that the near band edge emission of h-BN is unusually high and is more than two orders of magnitude higher than that of high quality AlN epilayers. It was shown that the unique quasi-2D nature induced by the layered structure of h-BN results in high optical absorption and emission. The impurity related and near band-edge transitions in h-BN epilayers were probed for materials synthesized under varying ammonia flow rates. Our results have identified that the most dominant impurities and deep level defects in h-BN epilayers are related to nitrogen vacancies. By growing h-BN under high ammonia flow rates, nitrogen vacancy related defects can be eliminated and epilayers exhibiting pure free exciton emission have been obtained. Deep UV and thermal neutron detectors based on h-BN epilayers were shown to possess unique features. Lastly, it is our belief that h-BN will lead to many potential applications from deep UV emitters and detectors, radiation detectors, to novel 2D photonic and electronicmore » devices.« less
Authors:
 [1] ;  [1]
  1. Texas Tech Univ., Lubbock, TX (United States)
Publication Date:
OSTI Identifier:
1330681
Grant/Contract Number:
NA0002927
Type:
Accepted Manuscript
Journal Name:
ECS Journal of Solid State Science and Technology
Additional Journal Information:
Journal Volume: 6; Journal Issue: 2; Journal ID: ISSN 2162-8769
Publisher:
Electrochemical Society
Research Org:
Texas Tech Univ., Lubbock, TX (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Security (NA-70)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE wide bandgap semiconductors; boron nitride; solid-state deep UV and neutron detectors; detectors; hexagonal boron nitride; MOCVD; optical properties of semiconductors; pholuminescence