Improving the radiation hardness of graphene field effect transistors

Alexandrou, Konstantinos; Masurkar, Amrita; Edrees, Hassan; Wishart, James F.; Hao, Yufeng; Petrone, Nicholas; Hone, James; Kymissis, Ioannis

doi:10.1063/1.4963782

Title: Improving the radiation hardness of graphene field effect transistors

Abstract

Ionizing radiation poses a significant challenge to the operation and reliability of conventional silicon-based devices. In this paper, we report the effects of gamma radiation on graphene field-effect transistors (GFETs), along with a method to mitigate those effects by developing a radiation-hardened version of our back-gated GFETs. We demonstrate that activated atmospheric oxygen from the gamma ray interaction with air damages the semiconductor device, and damage to the substrate contributes additional threshold voltage instability. Our radiation-hardened devices, which have protection against these two effects, exhibit minimal performance degradation, improved stability, and significantly reduced hysteresis after prolonged gamma radiation exposure. Finally, we believe this work provides an insight into graphene's interactions with ionizing radiation that could enable future graphene-based electronic devices to be used for space, military, and other radiation-sensitive applications.

Authors:

Alexandrou, Konstantinos ^[1]; Masurkar, Amrita ^[1]; Edrees, Hassan ^[1];

^[2]; Hao, Yufeng ^[3];

^[3]; Hone, James ^[3]; Kymissis, Ioannis ^[1]

Columbia Univ., New York, NY (United States). Dept. of Electrical Engineering
Brookhaven National Lab. (BNL), Upton, NY (United States). Chemistry Division
Columbia Univ., New York, NY (United States). Dept. of Mechanical Engineering

Publication Date:: Tue Oct 11 00:00:00 EDT 2016

Research Org.:: Brookhaven National Laboratory (BNL), Upton, NY (United States); Columbia Univ., New York, NY (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); Defense Threat Reduction Agency (DTRA) (United States)

OSTI Identifier:: 1341676

Alternate Identifier(s):: OSTI ID: 1328601

Report Number(s):: BNL-113404-2017-JA
Journal ID: ISSN 0003-6951; R&D Project: CO031; KC0304030; TRN: US1701532

Grant/Contract Number:: SC0012704; AC02-98CH10886; DMR-1420634; HDTRA1-11-0022

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 109; Journal Issue: 15; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; graphene; gamma rays; Dirac equation; gamma ray effects; x-ray photoelectron spectroscopy

Citation Formats


                    Alexandrou, Konstantinos, Masurkar, Amrita, Edrees, Hassan, Wishart, James F., Hao, Yufeng, Petrone, Nicholas, Hone, James, and Kymissis, Ioannis. Improving the radiation hardness of graphene field effect transistors.  United States: N. p., 2016. 
Web.  doi:10.1063/1.4963782.

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                    Alexandrou, Konstantinos, Masurkar, Amrita, Edrees, Hassan, Wishart, James F., Hao, Yufeng, Petrone, Nicholas, Hone, James, & Kymissis, Ioannis. Improving the radiation hardness of graphene field effect transistors.  United States.  https://doi.org/10.1063/1.4963782

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                    Alexandrou, Konstantinos, Masurkar, Amrita, Edrees, Hassan, Wishart, James F., Hao, Yufeng, Petrone, Nicholas, Hone, James, and Kymissis, Ioannis. Tue .  
"Improving the radiation hardness of graphene field effect transistors".  United States.  https://doi.org/10.1063/1.4963782.  https://www.osti.gov/servlets/purl/1341676.

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@article{osti_1341676,

  title        = {Improving the radiation hardness of graphene field effect transistors},

  author       = {Alexandrou, Konstantinos and Masurkar, Amrita and Edrees, Hassan and Wishart, James F. and Hao, Yufeng and Petrone, Nicholas and Hone, James and Kymissis, Ioannis},

  abstractNote = {Ionizing radiation poses a significant challenge to the operation and reliability of conventional silicon-based devices. In this paper, we report the effects of gamma radiation on graphene field-effect transistors (GFETs), along with a method to mitigate those effects by developing a radiation-hardened version of our back-gated GFETs. We demonstrate that activated atmospheric oxygen from the gamma ray interaction with air damages the semiconductor device, and damage to the substrate contributes additional threshold voltage instability. Our radiation-hardened devices, which have protection against these two effects, exhibit minimal performance degradation, improved stability, and significantly reduced hysteresis after prolonged gamma radiation exposure. Finally, we believe this work provides an insight into graphene's interactions with ionizing radiation that could enable future graphene-based electronic devices to be used for space, military, and other radiation-sensitive applications.},

  doi          = {10.1063/1.4963782},

  journal      = {Applied Physics Letters},

  number       = 15,

  volume       = 109,

  place        = {United States},

  year         = {Tue Oct 11 00:00:00 EDT 2016},

  month        = {Tue Oct 11 00:00:00 EDT 2016}

}

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Works referencing / citing this record:

A comprehensive study on the effects of gamma radiation on the physical properties of a two-dimensional WS ₂ monolayer semiconductor
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Felix, Jorlandio Francisco; da Silva, Arlon Fernandes; da Silva, Sebastião Willam
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Similar Records

Title: Improving the radiation hardness of graphene field effect transistors

Abstract

Citation Formats

Raman spectroscopy of graphene on different substrates and influence of defects journal, June 2008

Experimental observation of the quantum Hall effect and Berry's phase in graphene journal, November 2005

Review of displacement damage effects in silicon devices journal, June 2003

The Role of Surface Oxygen in the Growth of Large Single-Crystal Graphene on Copper journal, October 2013

Direct evidence for atomic defects in graphene layers journal, August 2004

Hysteresis of Electronic Transport in Graphene Transistors journal, November 2010

Low-Energy X-ray and Ozone-Exposure Induced Defect Formation in Graphene Materials and Devices journal, December 2011

Ozone-exposure and annealing effects on graphene-on-SiO 2 transistors journal, September 2012

Electric Field Effect in Atomically Thin Carbon Films journal, October 2004

Total ionizing dose-hardened carbon nanotube thin-film transistors with silicon oxynitride gate dielectrics journal, August 2011

Total Ionizing Dose Induced Charge Carrier Scattering in Graphene Devices journal, December 2012

The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO 2 journal, September 2011

Influence of irradiation upon few-layered graphene using electron-beams and gamma-rays journal, July 2014

The Role of the Oxygen/Water Redox Couple in Suppressing Electron Conduction in Field-Effect Transistors journal, August 2009

Ion-Irradiation-Induced Defects in Isotopically-Labeled Two Layered Graphene: Enhanced In-Situ Annealing of the Damage journal, November 2012

Charged-impurity scattering in graphene journal, April 2008

The effect of gamma-irradiation on few-layered graphene materials journal, May 2014

Space radiation dosimetry in low-Earth orbit and beyond journal, September 2001

The rise of graphene journal, March 2007

Irradiation effects in carbon nanostructures journal, July 1999

Boron nitride substrates for high-quality graphene electronics journal, August 2010

Encapsulated graphene field-effect transistors for air stable operation journal, March 2015

Total Ionizing Dose Effects on hBN Encapsulated Graphene Devices journal, December 2014

Gamma ray-assisted irradiation of few-layer graphene films: a Raman spectroscopy study journal, September 2014

Probing Layer Number and Stacking Order of Few-Layer Graphene by Raman Spectroscopy journal, January 2010

Ozone Formation in Air Exposed to Cobalt-60 Gamma Radiation journal, December 1963

Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene journal, July 2008

Modification of graphene properties due to electron-beam irradiation journal, January 2009

Transfer of CVD-Grown Monolayer Graphene onto Arbitrary Substrates journal, August 2011

Radiation Effects in Carbon Nanoelectronics journal, July 2012

Fine Structure Constant Defines Visual Transparency of Graphene journal, June 2008

The space radiation environment for electronics journal, January 1988

Laboratory Thin-Film Encapsulation of Air-Sensitive Organic Semiconductor Devices journal, January 2010

Thermal enhancement of chemical doping in graphene: a Raman spectroscopy study journal, August 2010

A comprehensive study on the effects of gamma radiation on the physical properties of a two-dimensional WS 2 monolayer semiconductor journal, January 2020

Gamma-ray radiation effects in graphene-based transistors with h-BN nanometer film substrates journal, November 2019

Graphene-based saturable absorber and mode-locked laser behaviors under gamma-ray radiation journal, January 2019

Radiation tolerance of two-dimensional material-based devices for space applications text, January 2019

Radiation tolerance of two-dimensional material-based devices for space applications text, January 2019

Radiation tolerance of two-dimensional material-based devices for space applications journal, March 2019

Radiation tolerance of two-dimensional material-based devices for space applications text, January 2018

Raman spectroscopy of graphene on different substrates and influence of defects
journal, June 2008

Experimental observation of the quantum Hall effect and Berry's phase in graphene
journal, November 2005

Review of displacement damage effects in silicon devices
journal, June 2003

The Role of Surface Oxygen in the Growth of Large Single-Crystal Graphene on Copper
journal, October 2013

Direct evidence for atomic defects in graphene layers
journal, August 2004

Hysteresis of Electronic Transport in Graphene Transistors
journal, November 2010

Low-Energy X-ray and Ozone-Exposure Induced Defect Formation in Graphene Materials and Devices
journal, December 2011

Ozone-exposure and annealing effects on graphene-on-SiO ₂ transistors
journal, September 2012

Electric Field Effect in Atomically Thin Carbon Films
journal, October 2004

Total ionizing dose-hardened carbon nanotube thin-film transistors with silicon oxynitride gate dielectrics
journal, August 2011

Total Ionizing Dose Induced Charge Carrier Scattering in Graphene Devices
journal, December 2012

The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO ₂
journal, September 2011

Influence of irradiation upon few-layered graphene using electron-beams and gamma-rays
journal, July 2014

The Role of the Oxygen/Water Redox Couple in Suppressing Electron Conduction in Field-Effect Transistors
journal, August 2009

Ion-Irradiation-Induced Defects in Isotopically-Labeled Two Layered Graphene: Enhanced In-Situ Annealing of the Damage
journal, November 2012

Charged-impurity scattering in graphene
journal, April 2008

The effect of gamma-irradiation on few-layered graphene materials
journal, May 2014

Space radiation dosimetry in low-Earth orbit and beyond
journal, September 2001

The rise of graphene
journal, March 2007

Irradiation effects in carbon nanostructures
journal, July 1999

Boron nitride substrates for high-quality graphene electronics
journal, August 2010

Encapsulated graphene field-effect transistors for air stable operation
journal, March 2015

Total Ionizing Dose Effects on hBN Encapsulated Graphene Devices
journal, December 2014

Gamma ray-assisted irradiation of few-layer graphene films: a Raman spectroscopy study
journal, September 2014

Probing Layer Number and Stacking Order of Few-Layer Graphene by Raman Spectroscopy
journal, January 2010

Ozone Formation in Air Exposed to Cobalt-60 Gamma Radiation
journal, December 1963

Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene
journal, July 2008

Modification of graphene properties due to electron-beam irradiation
journal, January 2009

Transfer of CVD-Grown Monolayer Graphene onto Arbitrary Substrates
journal, August 2011

Radiation Effects in Carbon Nanoelectronics
journal, July 2012

Fine Structure Constant Defines Visual Transparency of Graphene
journal, June 2008

The space radiation environment for electronics
journal, January 1988

Laboratory Thin-Film Encapsulation of Air-Sensitive Organic Semiconductor Devices
journal, January 2010

Thermal enhancement of chemical doping in graphene: a Raman spectroscopy study
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A comprehensive study on the effects of gamma radiation on the physical properties of a two-dimensional WS ₂ monolayer semiconductor
journal, January 2020

Gamma-ray radiation effects in graphene-based transistors with h-BN nanometer film substrates
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Graphene-based saturable absorber and mode-locked laser behaviors under gamma-ray radiation
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Radiation tolerance of two-dimensional material-based devices for space applications
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