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Title: Nd:AlN polycrystalline ceramics: A candidate media for tunable, high energy, near IR lasers

Abstract

We present processing and characterization of Nd-doped aluminum nitride (Nd:AlN) polycrystalline ceramics. We compare ceramics with significant segregation of Nd to those exhibiting minimal segregation. Spatially resolved photoluminescence maps reveal a strong correlation between homogeneous Nd doping and spatially homogeneous light emission. The spectroscopically resolved light emission lines show excellent agreement with the expected Nd electronic transitions. Notably, the lines are significantly broadened, producing near IR emission (~1077 nm) with a remarkable ~100 nm bandwidth at room temperature. We attribute the broadened lines to a combination of effects: multiple Nd-sites, anisotropy of AlN and phonon broadening. These broadened, overlapping lines in a media with excellent thermal conductivity have potential for Nd-based, tunable lasers with high average power.

Authors:
 [1]; ORCiD logo [1]; ORCiD logo [1];  [1];  [2]
  1. Univ. of California, Riverside, CA (United States)
  2. Univ. of California, Riverside, CA (United States); Univ. of California, San Diego, CA (United States), Mechanical and Aerospace Engineering Dept.
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Spins and Heat in Nanoscale Electronic Systems (SHINES)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1388944
Alternate Identifier(s):
OSTI ID: 1328460
Grant/Contract Number:  
SC0012670
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 12; Related Information: SHINES partners with University of California, Riverside (lead); Arizona State University; Colorado State University; Johns Hopkins University; University of California Irvine; University of California Los Angeles; University of Texas at Austin; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; phonons; thermal conductivity; thermoelectric; spin dynamics; spintronics

Citation Formats

Wieg, A. T., Grossnickle, M. J., Kodera, Y., Gabor, N. M., and Garay, J. E. Nd:AlN polycrystalline ceramics: A candidate media for tunable, high energy, near IR lasers. United States: N. p., 2016. Web. doi:10.1063/1.4962829.
Wieg, A. T., Grossnickle, M. J., Kodera, Y., Gabor, N. M., & Garay, J. E. Nd:AlN polycrystalline ceramics: A candidate media for tunable, high energy, near IR lasers. United States. https://doi.org/10.1063/1.4962829
Wieg, A. T., Grossnickle, M. J., Kodera, Y., Gabor, N. M., and Garay, J. E. Mon . "Nd:AlN polycrystalline ceramics: A candidate media for tunable, high energy, near IR lasers". United States. https://doi.org/10.1063/1.4962829. https://www.osti.gov/servlets/purl/1388944.
@article{osti_1388944,
title = {Nd:AlN polycrystalline ceramics: A candidate media for tunable, high energy, near IR lasers},
author = {Wieg, A. T. and Grossnickle, M. J. and Kodera, Y. and Gabor, N. M. and Garay, J. E.},
abstractNote = {We present processing and characterization of Nd-doped aluminum nitride (Nd:AlN) polycrystalline ceramics. We compare ceramics with significant segregation of Nd to those exhibiting minimal segregation. Spatially resolved photoluminescence maps reveal a strong correlation between homogeneous Nd doping and spatially homogeneous light emission. The spectroscopically resolved light emission lines show excellent agreement with the expected Nd electronic transitions. Notably, the lines are significantly broadened, producing near IR emission (~1077 nm) with a remarkable ~100 nm bandwidth at room temperature. We attribute the broadened lines to a combination of effects: multiple Nd-sites, anisotropy of AlN and phonon broadening. These broadened, overlapping lines in a media with excellent thermal conductivity have potential for Nd-based, tunable lasers with high average power.},
doi = {10.1063/1.4962829},
journal = {Applied Physics Letters},
number = 12,
volume = 109,
place = {United States},
year = {Mon Sep 19 00:00:00 EDT 2016},
month = {Mon Sep 19 00:00:00 EDT 2016}
}

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Works referencing / citing this record:

Ultraviolet optical excitation of near infrared emission of Yb-doped crystalline aluminum oxynitride thin films
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