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Title: The effect of sub-oxide phases on the transparency of tin-doped gallium oxide

Abstract

There have been a number of studies on the fabrication of Sn-doped gallium oxide (Ga2O3:Sn) films with both conductive and transparent properties using a variety of deposition methods. However, often, synthesis results in films that are not transparent. In this paper, we examine the mechanisms underlying these results in Ga2O3:Sn thin films prepared at various growth temperatures, Sn concentrations, and oxygen partial pressures. With X-ray absorption spectroscopy, transmission electron microscopy and energy dispersive spectroscopy, we find that when films are grown under the oxygen deficient conditions there are Ga sub-oxide and SnOx phases in the Ga2O3:Sn thin film. These Ga sub-oxide phases are only found in non-transparent films, and so we infer that the Ga sub-oxide is responsible for the non-transparency. These observations suggest that to obtain transparent Ga2O3:Sn, films deposition or subsequent annealing must be carefully controlled in both temperature and oxygen partial pressure to avoid the formation of Ga sub-oxide phases.

Authors:
; ; ; ; ; ORCiD logo; ; ; ; ;
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States); Energy Frontier Research Centers (EFRC) (United States). Center for Next Generation of Materials by Design: Incorporating Metastability (CNGMD); National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1337584
Alternate Identifier(s):
OSTI ID: 1328233; OSTI ID: 1329641; OSTI ID: 1331242
Report Number(s):
SLAC-PUB-16851; NREL/JA-5K00-67389
Journal ID: ISSN 0003-6951
Grant/Contract Number:  
AC02-06CH11357; AC02-76SF00515; AC36-08GO28308
Resource Type:
Published Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 109 Journal Issue: 14; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; x-ray absorption near edge structure; extended x-ray absorption fine structure spectroscopy; transmission electron microscopy; thin film growth; x-ray absorption spectroscopy; 14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Lim, K., Schelhas, L. T., Siah, S. C., Brandt, R. E., Zakutayev, A., Lany, S., Gorman, B., Sun, C. J., Ginley, D., Buonassisi, T., and Toney, M. F. The effect of sub-oxide phases on the transparency of tin-doped gallium oxide. United States: N. p., 2016. Web. doi:10.1063/1.4964638.
Lim, K., Schelhas, L. T., Siah, S. C., Brandt, R. E., Zakutayev, A., Lany, S., Gorman, B., Sun, C. J., Ginley, D., Buonassisi, T., & Toney, M. F. The effect of sub-oxide phases on the transparency of tin-doped gallium oxide. United States. https://doi.org/10.1063/1.4964638
Lim, K., Schelhas, L. T., Siah, S. C., Brandt, R. E., Zakutayev, A., Lany, S., Gorman, B., Sun, C. J., Ginley, D., Buonassisi, T., and Toney, M. F. Mon . "The effect of sub-oxide phases on the transparency of tin-doped gallium oxide". United States. https://doi.org/10.1063/1.4964638.
@article{osti_1337584,
title = {The effect of sub-oxide phases on the transparency of tin-doped gallium oxide},
author = {Lim, K. and Schelhas, L. T. and Siah, S. C. and Brandt, R. E. and Zakutayev, A. and Lany, S. and Gorman, B. and Sun, C. J. and Ginley, D. and Buonassisi, T. and Toney, M. F.},
abstractNote = {There have been a number of studies on the fabrication of Sn-doped gallium oxide (Ga2O3:Sn) films with both conductive and transparent properties using a variety of deposition methods. However, often, synthesis results in films that are not transparent. In this paper, we examine the mechanisms underlying these results in Ga2O3:Sn thin films prepared at various growth temperatures, Sn concentrations, and oxygen partial pressures. With X-ray absorption spectroscopy, transmission electron microscopy and energy dispersive spectroscopy, we find that when films are grown under the oxygen deficient conditions there are Ga sub-oxide and SnOx phases in the Ga2O3:Sn thin film. These Ga sub-oxide phases are only found in non-transparent films, and so we infer that the Ga sub-oxide is responsible for the non-transparency. These observations suggest that to obtain transparent Ga2O3:Sn, films deposition or subsequent annealing must be carefully controlled in both temperature and oxygen partial pressure to avoid the formation of Ga sub-oxide phases.},
doi = {10.1063/1.4964638},
journal = {Applied Physics Letters},
number = 14,
volume = 109,
place = {United States},
year = {Mon Oct 03 00:00:00 EDT 2016},
month = {Mon Oct 03 00:00:00 EDT 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1063/1.4964638

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