Using Atom-Probe Tomography to Understand ZnO:Al/SiO2/Si Schottky Diodes

Jaramillo, R.; Youssef, Amanda; Akey, Austin; Schoofs, Frank; Ramanathan, Shriram; Buonassisi, Tonio

doi:10.1103/PhysRevApplied.6.034016

Title: Using Atom-Probe Tomography to Understand $Zn O : Al / {Si O}_{2} / Si$ Schottky Diodes

Abstract

In this work, we use electronic transport and atom-probe tomography to study ZnO:Al=SiO₂=Si Schottky diodes on lightly doped n- and p-type Si. We vary the carrier concentration in the ZnO:Al films by 2 orders of magnitude, but the Schottky barrier height remains nearly constant. Atom-probe tomography shows that Al segregates to the interface, so that the ZnO:Al at the junction is likely to be metallic even when the bulk of the ZnO:Al film is semiconducting. We hypothesize that the observed Fermi-level pinning is connected to the insulator-metal transition in doped ZnO. In conclusion, this implies that tuning the band alignment at oxide/Si interfaces may be achieved by controlling the transition between localized and extended states in the oxide, thereby changing the orbital hybridization across the interface.

Authors:

Jaramillo, R. ^[1]; Youssef, Amanda ^[1]; Akey, Austin ^[1]; Schoofs, Frank ^[2]; Ramanathan, Shriram ^[3]; Buonassisi, Tonio ^[1]

Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Harvard Univ., Cambridge, MA (United States)
Harvard Univ., Cambridge, MA (United States); Purdue Univ., West Lafayette, IN (United States)

Publication Date:: Mon Sep 26 00:00:00 EDT 2016

Research Org.:: Stanford Univ., CA (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

OSTI Identifier:: 1579857

Alternate Identifier(s):: OSTI ID: 1326861

Grant/Contract Number:: EE0004946

Resource Type:: Accepted Manuscript

Journal Name:: Physical Review Applied

Additional Journal Information:: Journal Volume: 6; Journal Issue: 3; Journal ID: ISSN 2331-7019

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Jaramillo, R., Youssef, Amanda, Akey, Austin, Schoofs, Frank, Ramanathan, Shriram, and Buonassisi, Tonio. Using Atom-Probe Tomography to Understand ZnO:Al/SiO2/Si Schottky Diodes.  United States: N. p., 2016. 
Web.  doi:10.1103/PhysRevApplied.6.034016.

Copy to clipboard


                    Jaramillo, R., Youssef, Amanda, Akey, Austin, Schoofs, Frank, Ramanathan, Shriram, & Buonassisi, Tonio. Using Atom-Probe Tomography to Understand ZnO:Al/SiO2/Si Schottky Diodes.  United States.  https://doi.org/10.1103/PhysRevApplied.6.034016

Copy to clipboard


                    Jaramillo, R., Youssef, Amanda, Akey, Austin, Schoofs, Frank, Ramanathan, Shriram, and Buonassisi, Tonio. Mon .  
"Using Atom-Probe Tomography to Understand ZnO:Al/SiO2/Si Schottky Diodes".  United States.  https://doi.org/10.1103/PhysRevApplied.6.034016.  https://www.osti.gov/servlets/purl/1579857.

Copy to clipboard


                    
@article{osti_1579857,

  title        = {Using Atom-Probe Tomography to Understand ZnO:Al/SiO2/Si Schottky Diodes},

  author       = {Jaramillo, R. and Youssef, Amanda and Akey, Austin and Schoofs, Frank and Ramanathan, Shriram and Buonassisi, Tonio},

  abstractNote = {In this work, we use electronic transport and atom-probe tomography to study ZnO:Al=SiO2=Si Schottky diodes on lightly doped n- and p-type Si. We vary the carrier concentration in the ZnO:Al films by 2 orders of magnitude, but the Schottky barrier height remains nearly constant. Atom-probe tomography shows that Al segregates to the interface, so that the ZnO:Al at the junction is likely to be metallic even when the bulk of the ZnO:Al film is semiconducting. We hypothesize that the observed Fermi-level pinning is connected to the insulator-metal transition in doped ZnO. In conclusion, this implies that tuning the band alignment at oxide/Si interfaces may be achieved by controlling the transition between localized and extended states in the oxide, thereby changing the orbital hybridization across the interface.},

  doi          = {10.1103/PhysRevApplied.6.034016},

  journal      = {Physical Review Applied},

  number       = 3,

  volume       = 6,

  place        = {United States},

  year         = {Mon Sep 26 00:00:00 EDT 2016},

  month        = {Mon Sep 26 00:00:00 EDT 2016}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.1103/PhysRevApplied.6.034016

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 6 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Electronic Granularity and the Work Function of Transparent Conducting ZnO:Al Thin Films
journal, August 2011

Jaramillo, Rafael; Ramanathan, Shriram
Advanced Functional Materials, Vol. 21, Issue 21
DOI: 10.1002/adfm.201101069

Evolution of tip shape during field evaporation of complex multilayer structures: EVOLUTION OF TIP SHAPE DURING FIELD EVAPORATION
journal, February 2011

Marquis, E. A.; Geiser, B. P.; Prosa, T. J.
Journal of Microscopy, Vol. 241, Issue 3
DOI: 10.1111/j.1365-2818.2010.03421.x

Surface point defects and Schottky barrier formation on ZnO(101̄0)
journal, September 1980

Göpel, W.; Brillson, L. J.; Brucker, C. F.
Journal of Vacuum Science and Technology, Vol. 17, Issue 5
DOI: 10.1116/1.570612

Aluminum doped zinc oxide for organic photovoltaics
journal, May 2009

Murdoch, G. B.; Hinds, S.; Sargent, E. H.
Applied Physics Letters, Vol. 94, Issue 21
DOI: 10.1063/1.3142423

Surface potentials of magnetron sputtered transparent conducting oxides
journal, December 2009

Klein, A.; Körber, C.; Wachau, A.
Thin Solid Films, Vol. 518, Issue 4
DOI: 10.1016/j.tsf.2009.05.057

An Al-doped ZnO electrode grown by highly efficient cylindrical rotating magnetron sputtering for low cost organic photovoltaics
journal, March 2010

Park, Jun-Hyuk; Ahn, Kyung-Jun; Park, Kang-Il
Journal of Physics D: Applied Physics, Vol. 43, Issue 11
DOI: 10.1088/0022-3727/43/11/115101

A New Approach to the Determination of Concentration Profiles in Atom Probe Tomography
journal, February 2012

Felfer, Peter J.; Gault, Baptiste; Sha, Gang
Microscopy and Microanalysis, Vol. 18, Issue 2
DOI: 10.1017/S1431927611012530

Work function determination of zinc oxide films
journal, March 1997

Sundaram, K. B.; Khan, Ashamin
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 15, Issue 2
DOI: 10.1116/1.580502

First-principles density functional study of dopant elements at grain boundaries in ZnO
journal, February 2010

Körner, Wolfgang; Elsässer, Christian
Physical Review B, Vol. 81, Issue 8
DOI: 10.1103/PhysRevB.81.085324

Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices
journal, September 2003

Jiang, X.; Wong, F. L.; Fung, M. K.
Applied Physics Letters, Vol. 83, Issue 9
DOI: 10.1063/1.1605805

Group III dopant segregation and semiconductor-to-metal transition in ZnO nanowires: a first principles study
journal, January 2013

Xu, Maojie; Zhang, Yaozhong; Wei, Liangming
RSC Advances, Vol. 3, Issue 43
DOI: 10.1039/c3ra43858a

Mechanism of Fermi-level stabilization in semiconductors
journal, March 1988

Walukiewicz, W.
Physical Review B, Vol. 37, Issue 9
DOI: 10.1103/PhysRevB.37.4760

Schottky barrier height reduction for holes by Fermi level depinning using metal/nickel oxide/silicon contacts
journal, November 2014

Islam, Raisul; Shine, Gautam; Saraswat, Krishna C.
Applied Physics Letters, Vol. 105, Issue 18
DOI: 10.1063/1.4901193

High work function of Al-doped zinc-oxide thin films as transparent conductive anodes in organic light-emitting devices
journal, December 2006

Kim, T. W.; Choo, D. C.; No, Y. S.
Applied Surface Science, Vol. 253, Issue 4
DOI: 10.1016/j.apsusc.2006.03.032

Nanoscale surface electrical properties of aluminum zinc oxide thin films investigated by scanning probe microscopy
journal, December 2008

Chen, Sy-Hann; Yu, Chang-Feng; Lin, Yung-Shao
Journal of Applied Physics, Vol. 104, Issue 11
DOI: 10.1063/1.3042237

Photoresponse of Si detector based on n-ZnO/p-Si and n-ZnO/n-Si structures
journal, June 2001

Kim, H. Y.; Kim, J. H.; Kim, Y. J.
Optical Materials, Vol. 17, Issue 1-2
DOI: 10.1016/S0925-3467(01)00037-4

Silicon heterojunction solar cell with passivated hole selective MoO _x contact
journal, March 2014

Battaglia, Corsin; de Nicolás, Silvia Martín; De Wolf, Stefaan
Applied Physics Letters, Vol. 104, Issue 11
DOI: 10.1063/1.4868880

Local Density of States at Metal-Semiconductor Interfaces: An Atomic Scale Study
journal, April 2015

Iffländer, T.; Rolf-Pissarczyk, S.; Winking, L.
Physical Review Letters, Vol. 114, Issue 14
DOI: 10.1103/PhysRevLett.114.146804

Research Update: Inhomogeneous aluminium dopant distribution in magnetron sputtered ZnO:Al thin films and its influence on their electrical properties
journal, June 2015

Bikowski, André; Rengachari, Mythili; Nie, Man
APL Materials, Vol. 3, Issue 6
DOI: 10.1063/1.4922152

Interface-Induced Polarization and Inhibition of Ferroelectricity in Epitaxial ${SrTiO}_{3} / Si$
journal, November 2010

Kolpak, A. M.; Walker, F. J.; Reiner, J. W.
Physical Review Letters, Vol. 105, Issue 21
DOI: 10.1103/PhysRevLett.105.217601

Low content indium-doped zinc oxide films with tunable work function fabricated through magnetron sputtering
journal, February 2010

Huang, Changgang; Wang, Meili; Deng, Zhonghua
Semiconductor Science and Technology, Vol. 25, Issue 4
DOI: 10.1088/0268-1242/25/4/045008

The interface between silicon and a high-k oxide
journal, January 2004

Först, Clemens J.; Ashman, Christopher R.; Schwarz, Karlheinz
Nature, Vol. 427, Issue 6969
DOI: 10.1038/nature02204

The physics and chemistry of the Schottky barrier height
journal, January 2014

Tung, Raymond T.
Applied Physics Reviews, Vol. 1, Issue 1
DOI: 10.1063/1.4858400

Three-Dimensional Dopant Characterization of Actual Metal–Oxide–Semiconductor Devices of 65 nm Node by Atom Probe Tomography
journal, April 2013

Inoue, Koji; Takamizawa, Hisashi; Shimizu, Yasuo
Applied Physics Express, Vol. 6, Issue 4
DOI: 10.7567/APEX.6.046502

Atom Probe Tomography of Oxide Scales
journal, December 2012

Stiller, K.; Viskari, L.; Sundell, G.
Oxidation of Metals, Vol. 79, Issue 3-4
DOI: 10.1007/s11085-012-9330-6

Schottky barriers: An effective work function model
journal, November 1981

Freeouf, J. L.; Woodall, J. M.
Applied Physics Letters, Vol. 39, Issue 9
DOI: 10.1063/1.92863

Organic solar cells on indium tin oxide and aluminum doped zinc oxide anodes
journal, August 2007

Schulze, Kerstin; Maennig, Bert; Leo, Karl
Applied Physics Letters, Vol. 91, Issue 7
DOI: 10.1063/1.2771050

Dopability, Intrinsic Conductivity, and Nonstoichiometry of Transparent Conducting Oxides
journal, January 2007

Lany, Stephan; Zunger, Alex
Physical Review Letters, Vol. 98, Issue 4
DOI: 10.1103/PhysRevLett.98.045501

Theoretical models of Schottky barriers
journal, July 1982

Schluter, M.
Thin Solid Films, Vol. 93, Issue 1-2
DOI: 10.1016/0040-6090(82)90088-8

Carrier concentration dependence of band gap shift in n-type ZnO:Al films
journal, April 2007

Lu, J. G.; Fujita, S.; Kawaharamura, T.
Journal of Applied Physics, Vol. 101, Issue 8
DOI: 10.1063/1.2721374

The work function of n-ZnO deduced from heterojunctions with Si prepared by ALD
journal, July 2012

Quemener, V.; Alnes, M.; Vines, L.
Journal of Physics D: Applied Physics, Vol. 45, Issue 31
DOI: 10.1088/0022-3727/45/31/315101

Physics of Semiconductor Devices
book, January 2007

Sze, S. M.; Ng, Kwok K.
DOI: 10.1002/0470068329

Band discontinuities at Si-TCO interfaces from quasiparticle calculations: Comparison of two alignment approaches
journal, January 2012

Höffling, B.; Schleife, A.; Rödl, C.
Physical Review B, Vol. 85, Issue 3
DOI: 10.1103/PhysRevB.85.035305

Schottky Barrier Heights and the Continuum of Gap States
journal, February 1984

Tersoff, J.
Physical Review Letters, Vol. 52, Issue 6
DOI: 10.1103/PhysRevLett.52.465

Criteria for Choosing Transparent Conductors
journal, August 2000

Gordon, Roy G.
MRS Bulletin, Vol. 25, Issue 8
DOI: 10.1557/mrs2000.151

Reconstructing atom probe data: A review
journal, September 2013

Vurpillot, Francois; Gault, Baptiste; Geiser, Brian P.
Ultramicroscopy, Vol. 132
DOI: 10.1016/j.ultramic.2013.03.010

Fermi Level Position at Metal-Semiconductor Interfaces
journal, May 1964

Mead, C. A.; Spitzer, W. G.
Physical Review, Vol. 134, Issue 3A
DOI: 10.1103/PhysRev.134.A713

Similar Records in DOE PAGES and OSTI.GOV collections:

Surface reconstructions and modified surface states in $L a_{1 - x} C a_{x} Mn O_{3}$

Journal Article Vasudevan, Rama K. ; Dixit, Hemant M. ; Tselev, Alexander ; ... - Physical Review Materials

Here, the unique functionalities present at surfaces and interfaces of complex oxides have attracted intense research in the past decade. Yet, the fundamental mechanisms underpinning functionality are often elusive, especially in doped manganites, limiting their implementation in functional electronic devices such as memristors and spin valves. Here, we present a local probe-based study on mixed-terminated La_5/8Ca_3/8MnO₃ (LCMO) films, and reveal surface metallicity in a thin film grown by pulsed-laser deposition. Using first-principles density-functional theory calculations with Hubbard correction that are more accurate to capture effects of correlation in these systems, we show that for Ca-segregated (001) LCMO surfaces the (La,Ca)O-sitemore »« less
Cited by 7
https://doi.org/10.1103/PhysRevMaterials.2.104418

Full Text Available
Surface and interface properties of $L a_{2 / 3} S r_{1 / 3} Mn O_{3}$ thin films on ${SrTiO}_{3}$ (001)

Journal Article Chen, Lina ; Wang, Zhen ; Wang, Gaomin ; ... - Physical Review Materials

Understanding and manipulating properties emerging at a surface or an interface require a thorough knowledge of structure-property relationships. We report a study of a prototype oxide system, La_2/3Sr_1/3MnO₃ grown on SrTiO₃(001), by combining in situ angle-resolved x-ray photoelectron spectroscopy, ex situ x-ray diffraction, and scanning transmission electron microscopy/spectroscopy with electric transport measurements. We find that La_2/3Sr_1/3MnO₃ films thicker than 20 unit cells (u.c.) exhibit a universal behavior with no more than one u.c. intermixing at the interface but at least 3 u.c. of Sr segregation near the surface, which is (La/Sr)O terminated. The conductivity vs film thickness shows the existencemore »« less
Cited by 14
https://doi.org/10.1103/PhysRevMaterials.3.044407

Full Text Available
Design of Semiconducting Tetrahedral ${Mn}_{1 ₋ x} {Zn}_{x} O$ Alloys and Their Application to Solar Water Splitting

Journal Article Peng, Haowei ; Ndione, Paul F. ; Ginley, David S. ; ... - Physical Review. X

Transition metal oxides play important roles as contact and electrode materials, but their use as active layers in solar energy conversion requires achieving semiconducting properties akin to those of conventional semiconductors like Si or GaAs. In particular, efficient bipolar carrier transport is a challenge in these materials. Based on the prediction that a tetrahedral polymorph of MnO should have such desirable semiconducting properties, and the possibility to overcome thermodynamic solubility limits by nonequilibrium thin-film growth, we exploit both structure-property and composition-structure relationships to design and realize novel wurtzite-structure Mn_1₋xZn_xO alloys. At Zn compositions above x≈0.3, thin films of these alloysmore »« less
Cited by 56
https://doi.org/10.1103/PhysRevX.5.021016
Homogeneous superconducting gap in $Dy {Ba}_{2} {Cu}_{3} O_{7 - δ}$ synthesized by oxide molecular beam epitaxy

Journal Article Wu, Ze-Bin ; Putzky, Daniel ; Kundu, Asish K. ; ... - Physical Review Materials

Mucmore »« less
https://doi.org/10.1103/physrevmaterials.4.124801

Full Text Available
${(LaCo O_{3})}_{n} / {(SrCo O_{2.5})}_{n}$ superlattices: Tunable ferromagnetic insulator

Journal Article Noh, S. J. ; Ahn, G. H. ; Seo, J. H. ; ... - Physical Review B

Ferromagnetic insulators have great potential for spintronic applications. For such applications, it is essential to find materials with a robust and controllable ferromagnetic insulating phase. Yet, because ferromagnetism in functional transition-metal oxides is usually coupled to metallicity, ferromagnetic insulators are very rare and independent control of their magnetic and electrical properties is difficult. In this study, the electrical, magnetic, and optical properties of (LaCoO₃)_n/(SrCoO_2.5)_n superlattice films are investigated for the manipulation of the ferromagnetic insulating phase. While the superlattices remain insulating irrespective of the periodicity n, the electronic structure and magnetic state vary drastically. Superlattices with large periodicities n ofmore »« less
Cited by 6
https://doi.org/10.1103/physrevb.100.064415

Full Text Available

Similar Records

Title: Using Atom-Probe Tomography to Understand Zn O : Al / Si O 2 / Si Schottky Diodes

Abstract

Citation Formats

Electronic Granularity and the Work Function of Transparent Conducting ZnO:Al Thin Films journal, August 2011

Evolution of tip shape during field evaporation of complex multilayer structures: EVOLUTION OF TIP SHAPE DURING FIELD EVAPORATION journal, February 2011

Surface point defects and Schottky barrier formation on ZnO(101̄0) journal, September 1980

Aluminum doped zinc oxide for organic photovoltaics journal, May 2009

Surface potentials of magnetron sputtered transparent conducting oxides journal, December 2009

An Al-doped ZnO electrode grown by highly efficient cylindrical rotating magnetron sputtering for low cost organic photovoltaics journal, March 2010

A New Approach to the Determination of Concentration Profiles in Atom Probe Tomography journal, February 2012

Work function determination of zinc oxide films journal, March 1997

First-principles density functional study of dopant elements at grain boundaries in ZnO journal, February 2010

Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices journal, September 2003

Group III dopant segregation and semiconductor-to-metal transition in ZnO nanowires: a first principles study journal, January 2013

Mechanism of Fermi-level stabilization in semiconductors journal, March 1988

Schottky barrier height reduction for holes by Fermi level depinning using metal/nickel oxide/silicon contacts journal, November 2014

High work function of Al-doped zinc-oxide thin films as transparent conductive anodes in organic light-emitting devices journal, December 2006

Nanoscale surface electrical properties of aluminum zinc oxide thin films investigated by scanning probe microscopy journal, December 2008

Photoresponse of Si detector based on n-ZnO/p-Si and n-ZnO/n-Si structures journal, June 2001

Silicon heterojunction solar cell with passivated hole selective MoO x contact journal, March 2014

Local Density of States at Metal-Semiconductor Interfaces: An Atomic Scale Study journal, April 2015

Research Update: Inhomogeneous aluminium dopant distribution in magnetron sputtered ZnO:Al thin films and its influence on their electrical properties journal, June 2015

Interface-Induced Polarization and Inhibition of Ferroelectricity in Epitaxial SrTiO 3 / Si journal, November 2010

Low content indium-doped zinc oxide films with tunable work function fabricated through magnetron sputtering journal, February 2010

The interface between silicon and a high-k oxide journal, January 2004

The physics and chemistry of the Schottky barrier height journal, January 2014

Three-Dimensional Dopant Characterization of Actual Metal–Oxide–Semiconductor Devices of 65 nm Node by Atom Probe Tomography journal, April 2013

Atom Probe Tomography of Oxide Scales journal, December 2012

Schottky barriers: An effective work function model journal, November 1981

Organic solar cells on indium tin oxide and aluminum doped zinc oxide anodes journal, August 2007

Dopability, Intrinsic Conductivity, and Nonstoichiometry of Transparent Conducting Oxides journal, January 2007

Theoretical models of Schottky barriers journal, July 1982

Carrier concentration dependence of band gap shift in n-type ZnO:Al films journal, April 2007

The work function of n-ZnO deduced from heterojunctions with Si prepared by ALD journal, July 2012

Physics of Semiconductor Devices book, January 2007

Band discontinuities at Si-TCO interfaces from quasiparticle calculations: Comparison of two alignment approaches journal, January 2012

Schottky Barrier Heights and the Continuum of Gap States journal, February 1984

Criteria for Choosing Transparent Conductors journal, August 2000

Reconstructing atom probe data: A review journal, September 2013

Fermi Level Position at Metal-Semiconductor Interfaces journal, May 1964

Title: Using Atom-Probe Tomography to Understand $Zn O : Al / {Si O}_{2} / Si$ Schottky Diodes

Electronic Granularity and the Work Function of Transparent Conducting ZnO:Al Thin Films
journal, August 2011

Evolution of tip shape during field evaporation of complex multilayer structures: EVOLUTION OF TIP SHAPE DURING FIELD EVAPORATION
journal, February 2011

Surface point defects and Schottky barrier formation on ZnO(101̄0)
journal, September 1980

Aluminum doped zinc oxide for organic photovoltaics
journal, May 2009

Surface potentials of magnetron sputtered transparent conducting oxides
journal, December 2009

An Al-doped ZnO electrode grown by highly efficient cylindrical rotating magnetron sputtering for low cost organic photovoltaics
journal, March 2010

A New Approach to the Determination of Concentration Profiles in Atom Probe Tomography
journal, February 2012

Work function determination of zinc oxide films
journal, March 1997

First-principles density functional study of dopant elements at grain boundaries in ZnO
journal, February 2010

Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices
journal, September 2003

Group III dopant segregation and semiconductor-to-metal transition in ZnO nanowires: a first principles study
journal, January 2013

Mechanism of Fermi-level stabilization in semiconductors
journal, March 1988

Schottky barrier height reduction for holes by Fermi level depinning using metal/nickel oxide/silicon contacts
journal, November 2014

High work function of Al-doped zinc-oxide thin films as transparent conductive anodes in organic light-emitting devices
journal, December 2006

Nanoscale surface electrical properties of aluminum zinc oxide thin films investigated by scanning probe microscopy
journal, December 2008

Photoresponse of Si detector based on n-ZnO/p-Si and n-ZnO/n-Si structures
journal, June 2001

Silicon heterojunction solar cell with passivated hole selective MoO _x contact
journal, March 2014

Local Density of States at Metal-Semiconductor Interfaces: An Atomic Scale Study
journal, April 2015

Research Update: Inhomogeneous aluminium dopant distribution in magnetron sputtered ZnO:Al thin films and its influence on their electrical properties
journal, June 2015

Interface-Induced Polarization and Inhibition of Ferroelectricity in Epitaxial ${SrTiO}_{3} / Si$
journal, November 2010

Low content indium-doped zinc oxide films with tunable work function fabricated through magnetron sputtering
journal, February 2010

The interface between silicon and a high-k oxide
journal, January 2004

The physics and chemistry of the Schottky barrier height
journal, January 2014

Three-Dimensional Dopant Characterization of Actual Metal–Oxide–Semiconductor Devices of 65 nm Node by Atom Probe Tomography
journal, April 2013

Atom Probe Tomography of Oxide Scales
journal, December 2012

Schottky barriers: An effective work function model
journal, November 1981

Organic solar cells on indium tin oxide and aluminum doped zinc oxide anodes
journal, August 2007

Dopability, Intrinsic Conductivity, and Nonstoichiometry of Transparent Conducting Oxides
journal, January 2007

Theoretical models of Schottky barriers
journal, July 1982

Carrier concentration dependence of band gap shift in n-type ZnO:Al films
journal, April 2007

The work function of n-ZnO deduced from heterojunctions with Si prepared by ALD
journal, July 2012

Physics of Semiconductor Devices
book, January 2007

Band discontinuities at Si-TCO interfaces from quasiparticle calculations: Comparison of two alignment approaches
journal, January 2012

Schottky Barrier Heights and the Continuum of Gap States
journal, February 1984

Criteria for Choosing Transparent Conductors
journal, August 2000

Reconstructing atom probe data: A review
journal, September 2013

Fermi Level Position at Metal-Semiconductor Interfaces
journal, May 1964