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Title: High ferroelectric polarization in c-oriented BaTiO3 epitaxial thin films on SrTiO3/Si(001)

The integration of epitaxial BaTiO3 films on silicon, combining c-orientation, surface flatness, and high ferroelectric polarization is of main interest towards its use in memory devices. This combination of properties has been only achieved so far by using yttria-stabilized zirconia buffer layers. Here, the all-perovskite BaTiO3/LaNiO3/SrTiO3 heterostructure is grown monolithically on Si(001). The BaTiO3 films are epitaxial and c-oriented and present low surface roughness and high remnant ferroelectric polarization around 6 μC/cm2. Lastly, this result paves the way towards the fabrication of lead-free BaTiO3 ferroelectric memories on silicon platforms.
 [1] ;  [2] ;  [3] ;  [3] ;  [4] ;  [4] ;  [5] ;  [3] ;  [3] ;  [4] ;  [3]
  1. Institut de Ciencia de Materials de Barcelona (ICMAB-CSIC), Barcelona (Spain); Univ. Autonoma de Barcelona, Barcelona (Spain)
  2. Institut de Ciencia de Materials de Barcelona (ICMAB-CSIC), Barcelona (Spain); National Taipei Univ. of Technology (TAIPEI TECH), Taipei (Taiwan)
  3. Institut de Ciencia de Materials de Barcelona (ICMAB-CSIC), Barcelona (Spain)
  4. Institut des Nanotechnologies de Lyon (INL), UMR CNRS, Ecole Centrale de Lyon, Ecully Cedex (France)
  5. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
OSTI Identifier:
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 12; Journal ID: ISSN 0003-6951
American Institute of Physics (AIP)
Research Org:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Org:
USDOE Office of Science (SC)
Country of Publication:
United States
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY epitaxy; buffer layers; ferroelectric thin films; polarization; x-ray diffraction