APT mass spectrometry and SEM data for CdTe solar cells

Poplawsky, Jonathan D.; Li, Chen; Paudel, Naba R.; Guo, Wei; Yan, Yanfa; Pennycook, Stephen J.

doi:10.1016/j.dib.2016.03.042

Title: APT mass spectrometry and SEM data for CdTe solar cells

Full Record
Other Related Research

Abstract

Atom probe tomography (APT) data acquired from a CAMECA LEAP 4000 XHR for the CdS/CdTe interface for a non-CdCl₂ treated CdTe solar cell as well as the mass spectrum of an APT data set including a GB in a CdCl₂-treated CdTe solar cell are presented. Scanning electron microscopy (SEM) data showing the evolution of sample preparation for APT and scanning transmission electron microscopy (STEM) electron beam induced current (EBIC) are also presented. As a result, these data show mass spectrometry peak decomposition of Cu and Te within an APT dataset, the CdS/CdTe interface of an untreated CdTe solar cell, preparation of APT needles from the CdS/CdTe interface in superstrate grown CdTe solar cells, and the preparation of a cross-sectional STEM EBIC sample.

Authors:

; Li, Chen; Paudel, Naba R.; Guo, Wei; Yan, Yanfa; Pennycook, Stephen J.

Publication Date:: Wed Jun 01 00:00:00 EDT 2016

Research Org.:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE); USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE Office of Science (SC)

OSTI Identifier:: 1324835

Alternate Identifier(s):: OSTI ID: 1261322

Grant/Contract Number:: FOA-0000492; AC05-00OR22725

Resource Type:: Published Article

Journal Name:: Data in Brief

Additional Journal Information:: Journal Name: Data in Brief Journal Volume: 7 Journal Issue: C; Journal ID: ISSN 2352-3409

Publisher:: Elsevier

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; scanning electron microscopy; atom probe tomography; mass spectroscopy; solar cells

Citation Formats


                    Poplawsky, Jonathan D., Li, Chen, Paudel, Naba R., Guo, Wei, Yan, Yanfa, and Pennycook, Stephen J. APT mass spectrometry and SEM data for CdTe solar cells.  United States: N. p., 2016. 
Web.  doi:10.1016/j.dib.2016.03.042.

Copy to clipboard


                    Poplawsky, Jonathan D., Li, Chen, Paudel, Naba R., Guo, Wei, Yan, Yanfa, & Pennycook, Stephen J. APT mass spectrometry and SEM data for CdTe solar cells.  United States.  https://doi.org/10.1016/j.dib.2016.03.042

Copy to clipboard


                    Poplawsky, Jonathan D., Li, Chen, Paudel, Naba R., Guo, Wei, Yan, Yanfa, and Pennycook, Stephen J. Wed .  
"APT mass spectrometry and SEM data for CdTe solar cells".  United States.  https://doi.org/10.1016/j.dib.2016.03.042.

Copy to clipboard


                    
@article{osti_1324835,

  title        = {APT mass spectrometry and SEM data for CdTe solar cells},

  author       = {Poplawsky, Jonathan D. and Li, Chen and Paudel, Naba R. and Guo, Wei and Yan, Yanfa and Pennycook, Stephen J.},

  abstractNote = {Atom probe tomography (APT) data acquired from a CAMECA LEAP 4000 XHR for the CdS/CdTe interface for a non-CdCl2 treated CdTe solar cell as well as the mass spectrum of an APT data set including a GB in a CdCl2-treated CdTe solar cell are presented. Scanning electron microscopy (SEM) data showing the evolution of sample preparation for APT and scanning transmission electron microscopy (STEM) electron beam induced current (EBIC) are also presented. As a result, these data show mass spectrometry peak decomposition of Cu and Te within an APT dataset, the CdS/CdTe interface of an untreated CdTe solar cell, preparation of APT needles from the CdS/CdTe interface in superstrate grown CdTe solar cells, and the preparation of a cross-sectional STEM EBIC sample.},

  doi          = {10.1016/j.dib.2016.03.042},

  journal      = {Data in Brief},

  number       = C,

  volume       = 7,

  place        = {United States},

  year         = {Wed Jun 01 00:00:00 EDT 2016},

  month        = {Wed Jun 01 00:00:00 EDT 2016}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Publisher's Version of Record
https://doi.org/10.1016/j.dib.2016.03.042

Other availability

Search WorldCat to find libraries that may hold this journal

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE PAGES and OSTI.GOV collections:

High Resolution Dopant Profiles Revealed by Atom Probe Tomography and STEM-EBIC for CdTe Based Solar Cells

Journal Article Poplawsky, Jonathan D. ; Li, Chen ; Paudel, Naba ; ... - Solar Energy Materials and Solar Cells

Segregated elements and their diffusion profiles within grain boundaries and interfaces resulting from post deposition heat treatments are revealed using atom probe tomography (APT), scanning transmission electron microscopy (STEM), and electron beam induced current (EBIC) techniques. The results demonstrate how these techniques complement each other to provide conclusive evidence for locations of space charge regions and mechanisms that create them at the nanoscale. Most importantly, a Cl dopant profile that extends ~5 nm into CdTe grains interfacing the CdS is shown using APT and STEM synergy, which has been shown to push the pn-junction into the CdTe layer indicative ofmore »« less
Cited by 31
https://doi.org/10.1016/j.solmat.2016.02.004

Full Text Available
CdCl{sub 2} treatment related diffusion phenomena in Cd{sub 1−x}Zn{sub x}S/CdTe solar cells

Journal Article Kartopu, G., E-mail: giray.kartopu@glyndwr.ac.uk ; Clayton, A. J. ; Barrioz, V. ; ... - Journal of Applied Physics

Utilisation of wide bandgap Cd{sub 1−x}Zn{sub x}S alloys as an alternative to the CdS window layer is an attractive route to enhance the performance of CdTe thin film solar cells. For successful implementation, however, it is vital to control the composition and properties of Cd{sub 1−x}Zn{sub x}S through device fabrication processes involving the relatively high-temperature CdTe deposition and CdCl{sub 2} activation steps. In this study, cross-sectional scanning transmission electron microscopy and depth profiling methods were employed to investigate chemical and structural changes in CdTe/Cd{sub 1−x}Zn{sub x}S/CdS superstrate device structures deposited on an ITO/boro-aluminosilicate substrate. Comparison of three devices in differentmore »« less
https://doi.org/10.1063/1.4868224
Understanding individual defects in CdTe thin-film solar cells via STEM: From atomic structure to electrical activity

Journal Article Li, Chen ; Poplawsky, Jonathan ; Yan, Yanfa ; ... - Materials Science in Semiconductor Processing

Here in this paper we review a systematic study of the structure-property correlations of a series of defects in CdTe solar cells. A variety of experimental methods, including aberration-corrected scanning transmission electron microscopy, electron energy loss spectroscopy, energy dispersive X-ray spectroscopy, and electron-beam-induced current have been combined with density-functional theory. The research traces the connections between the structures and electrical activities of individual defects including intra-grain partial dislocations, grain boundaries and the CdTe/CdS interface. The interpretations of the physical origin underlying the structure-property correlation provide insights that should further the development of future CdTe solar cells.
Cited by 31
https://doi.org/10.1016/j.mssp.2016.06.017

Full Text Available
Polycrystalline thin film CdTe solar cells fabricated by electrodeposition

Conference Kim, D ; Pozder, S ; Zhu, Y ; ...

Several issues regarding the fabrication of CdTe solar cells by electrodeposition have been investigated. The CdTe deposition parameters were optimized as follows: the deposition current density J{sub dep} = 0.33--0.40 mA/cm{sup 2}, the anode current ratio R{sub Te/Cd} = 2.7, and the deposition potential V{sub dep} = {minus}600 mV against a Ag/AgCl reference electrode. CdCl{sub 2} treatment and subsequent annealing made a significant change in the composition: the film became Cd-rich throughout its whole thickness, and the concentrations of both Cd and Cl increased near the surface. Electron beam-induced current (EBIC) data showed a peak inside the CdTe layer suggestingmore »« less
Column-by-column observation of dislocation motion in CdTe: Dynamic scanning transmission electron microscopy

Journal Article Li, Chen ; Zhang, Yu-Yang ; Pennycook, Timothy J. ; ... - Applied Physics Letters

The dynamics of partial dislocations in CdTe have been observed at the atomic scale using aberration-corrected scanning transmission electron microscopy (STEM), allowing the mobility of different dislocations to be directly compared: Cd-core Shockley partial dislocations are more mobile than Te-core partials, and dislocation cores with unpaired columns have higher mobility than those without unpaired columns. The dynamic imaging also provides insight into the process by which the dislocations glide. Dislocations with dangling bonds on unpaired columns are found to be more mobile because the dangling bonds mediate the bond exchanges required for the dislocations to move. Furthermore, a screw dislocationmore »« less
Cited by 6
https://doi.org/10.1063/1.4963765

Full Text Available

Similar Records