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This content will become publicly available on September 13, 2017

Title: Characterization of electrical properties in axial Si-Ge nanowire heterojunctions using off-axis electron holography and atom-probe tomography

Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [2] ;  [2] ;  [2] ;  [4] ;  [2] ;  [3] ;  [1] ;  [1]
  1. Department of Physics, Arizona State University, Tempe, Arizona 85287, USA
  2. Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352, USA
  3. Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
  4. Department of Mechanical Engineering and Materials Science, University of Pittsburgh, Pennsylvania 15261, USA
Publication Date:
OSTI Identifier:
1324364
Grant/Contract Number:
AC52-06NA25396; FG02-04ER46168
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 120; Journal Issue: 10; Related Information: CHORUS Timestamp: 2016-09-13 13:01:32; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English