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This content will become publicly available on May 24, 2017

Title: 4H–SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth

Authors:
; ; ;
Publication Date:
OSTI Identifier:
1324352
Grant/Contract Number:
12-3834
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 448; Journal Issue: C; Related Information: CHORUS Timestamp: 2016-09-13 07:29:01; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Sponsoring Org:
USDOE
Country of Publication:
Netherlands
Language:
English