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This content will become publicly available on September 2, 2017

Title: Enhanced gamma ray sensitivity in bismuth triiodide sensors through volumetric defect control

Authors:
 [1] ;  [1] ;  [1]
  1. Nuclear Engineering Program, Department of Materials Science and Engineering, University of Florida, 100 Rhines Hall, Gainesville, Florida 32611, USA
Publication Date:
OSTI Identifier:
1315848
Grant/Contract Number:
NE0000730
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 9; Related Information: CHORUS Timestamp: 2016-09-02 13:16:07; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English