Recombination by band-to-defect tunneling near semiconductor heterojunctions: A theoretical model
Abstract
Carrier transport and recombination are modeled for a heterojunction diode containing defect traps. Here, particular attention is given to the role of band-to-trap tunneling and how it is affected by band offsets at the junction. Tunneled states are characterized by numerical solution of the Schrodinger equation, and the interaction with traps is treated assuming capture and emission by the multi-phonon mechanism. It is shown that tunneling can increase carrier recombination at defects by orders magnitude in the presence of large band offsets. This explains why InGaP/GaAs/GaAs Npn HBTs with displacement damage from energetic particle irradiation have higher carrier recombination in the emitter-base depletion region.
- Authors:
-
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Security
- OSTI Identifier:
- 1301989
- Alternate Identifier(s):
- OSTI ID: 1328481
- Report Number(s):
- SAND-2016-4695J
Journal ID: ISSN 0021-8979; 640353; TRN: US1700087
- Grant/Contract Number:
- AC04-94AL85000
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 120; Journal Issue: 13; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; tunneling; heterojunctions; conduction electrons; band models; valence bands
Citation Formats
Wampler, William R., Samuel M. Myers, and Modine, Normand A. Recombination by band-to-defect tunneling near semiconductor heterojunctions: A theoretical model. United States: N. p., 2016.
Web. doi:10.1063/1.4963873.
Wampler, William R., Samuel M. Myers, & Modine, Normand A. Recombination by band-to-defect tunneling near semiconductor heterojunctions: A theoretical model. United States. https://doi.org/10.1063/1.4963873
Wampler, William R., Samuel M. Myers, and Modine, Normand A. Tue .
"Recombination by band-to-defect tunneling near semiconductor heterojunctions: A theoretical model". United States. https://doi.org/10.1063/1.4963873. https://www.osti.gov/servlets/purl/1301989.
@article{osti_1301989,
title = {Recombination by band-to-defect tunneling near semiconductor heterojunctions: A theoretical model},
author = {Wampler, William R. and Samuel M. Myers and Modine, Normand A.},
abstractNote = {Carrier transport and recombination are modeled for a heterojunction diode containing defect traps. Here, particular attention is given to the role of band-to-trap tunneling and how it is affected by band offsets at the junction. Tunneled states are characterized by numerical solution of the Schrodinger equation, and the interaction with traps is treated assuming capture and emission by the multi-phonon mechanism. It is shown that tunneling can increase carrier recombination at defects by orders magnitude in the presence of large band offsets. This explains why InGaP/GaAs/GaAs Npn HBTs with displacement damage from energetic particle irradiation have higher carrier recombination in the emitter-base depletion region.},
doi = {10.1063/1.4963873},
journal = {Journal of Applied Physics},
number = 13,
volume = 120,
place = {United States},
year = {Tue Oct 04 00:00:00 EDT 2016},
month = {Tue Oct 04 00:00:00 EDT 2016}
}
Web of Science
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Works referencing / citing this record:
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