Quantification of irradiation defects in beta-silicon carbide using Raman spectroscopy
Abstract
Raman spectra from polycrystalline beta-silicon carbide (SiC) were collected following neutron irradiation at 380–1180 °C to 0.011–1.87 displacement per atom. The longitudinal optical (LO) peak shifted to a lower frequency and broadened as a result of the irradiation. The changes observed in the LO phonon line shape and position in neutron-irradiated SiC are explained by a combination of changes in the lattice constant and Young's modulus, and the phonon confinement effect. The phonon confinement model reasonably estimates the defect-defect distance in the irradiated SiC, which is consistent with results from previous experimental studies and simulations.
- Authors:
-
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). High Flux Isotope Reactor (HFIR); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). High Temperature Materials Lab. (HTML)
- Sponsoring Org.:
- USDOE Office of Science (SC), Fusion Energy Sciences (FES); USDOE Office of Nuclear Energy (NE); USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1295114
- Alternate Identifier(s):
- OSTI ID: 1359858
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Scripta Materialia
- Additional Journal Information:
- Journal Volume: 125; Journal Issue: C; Journal ID: ISSN 1359-6462
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; Silicon carbide; Irradiation defects; Raman spectroscopy
Citation Formats
Koyanagi, T., Lance, M. J., and Katoh, Y. Quantification of irradiation defects in beta-silicon carbide using Raman spectroscopy. United States: N. p., 2016.
Web. doi:10.1016/j.scriptamat.2016.08.004.
Koyanagi, T., Lance, M. J., & Katoh, Y. Quantification of irradiation defects in beta-silicon carbide using Raman spectroscopy. United States. https://doi.org/10.1016/j.scriptamat.2016.08.004
Koyanagi, T., Lance, M. J., and Katoh, Y. Thu .
"Quantification of irradiation defects in beta-silicon carbide using Raman spectroscopy". United States. https://doi.org/10.1016/j.scriptamat.2016.08.004. https://www.osti.gov/servlets/purl/1295114.
@article{osti_1295114,
title = {Quantification of irradiation defects in beta-silicon carbide using Raman spectroscopy},
author = {Koyanagi, T. and Lance, M. J. and Katoh, Y.},
abstractNote = {Raman spectra from polycrystalline beta-silicon carbide (SiC) were collected following neutron irradiation at 380–1180 °C to 0.011–1.87 displacement per atom. The longitudinal optical (LO) peak shifted to a lower frequency and broadened as a result of the irradiation. The changes observed in the LO phonon line shape and position in neutron-irradiated SiC are explained by a combination of changes in the lattice constant and Young's modulus, and the phonon confinement effect. The phonon confinement model reasonably estimates the defect-defect distance in the irradiated SiC, which is consistent with results from previous experimental studies and simulations.},
doi = {10.1016/j.scriptamat.2016.08.004},
journal = {Scripta Materialia},
number = C,
volume = 125,
place = {United States},
year = {Thu Aug 11 00:00:00 EDT 2016},
month = {Thu Aug 11 00:00:00 EDT 2016}
}
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Works referencing / citing this record:
Raman spectroscopy of neutron irradiated silicon carbide: Correlation among Raman spectra, swelling, and irradiation temperature
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