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Title: Notes on the plasma resonance peak employed to determine doping in SiC

In this study, the doping level of a semiconductor material can be determined using the plasma resonance frequency to obtain the carrier concentration associated with doping. This paper provides an overview of the procedure for the three most common polytypes of SiC. Results for 3C-SiC are presented and discussed. In phosphorus doped samples analysed, it is submitted that the 2nd plasma resonance cannot be detected due to high values of the free carrier damping constant γ.
Authors:
 [1] ;  [2] ;  [3] ;  [3] ;  [1]
  1. Nelson Mandela Metropolitan Univ., Port Elizabeth (South Africa)
  2. Idaho National Lab. (INL), Idaho Falls, ID (United States)
  3. Linkoping Univ., Linkoping (Sweden)
Publication Date:
OSTI Identifier:
1294505
Report Number(s):
INL/JOU--15-35866
Journal ID: ISSN 1350-4495; PII: S1350449515001620
Grant/Contract Number:
AC07-05ID14517
Type:
Accepted Manuscript
Journal Name:
Infrared Physics and Technology
Additional Journal Information:
Journal Volume: 72; Journal Issue: C; Journal ID: ISSN 1350-4495
Publisher:
Elsevier
Research Org:
Idaho National Laboratory, Idaho Falls, ID (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS infrared reflectance; SiC; plasma resonance; doping concentration