Notes on the plasma resonance peak employed to determine doping in SiC
Abstract
In this study, the doping level of a semiconductor material can be determined using the plasma resonance frequency to obtain the carrier concentration associated with doping. This paper provides an overview of the procedure for the three most common polytypes of SiC. Results for 3C-SiC are presented and discussed. In phosphorus doped samples analysed, it is submitted that the 2nd plasma resonance cannot be detected due to high values of the free carrier damping constant γ.
- Authors:
-
- Nelson Mandela Metropolitan Univ., Port Elizabeth (South Africa)
- Idaho National Lab. (INL), Idaho Falls, ID (United States)
- Linkoping Univ., Linkoping (Sweden)
- Publication Date:
- Research Org.:
- Idaho National Laboratory (INL), Idaho Falls, ID (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1294505
- Report Number(s):
- INL/JOU-15-35866
Journal ID: ISSN 1350-4495; PII: S1350449515001620
- Grant/Contract Number:
- AC07-05ID14517
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Infrared Physics and Technology
- Additional Journal Information:
- Journal Volume: 72; Journal Issue: C; Journal ID: ISSN 1350-4495
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS; infrared reflectance; SiC; plasma resonance; doping concentration
Citation Formats
Engelbrecht, J. A. A., van Rooyen, I. J., Henry, A., Janzen, E., and Sephton, B. Notes on the plasma resonance peak employed to determine doping in SiC. United States: N. p., 2015.
Web. doi:10.1016/j.infrared.2015.07.007.
Engelbrecht, J. A. A., van Rooyen, I. J., Henry, A., Janzen, E., & Sephton, B. Notes on the plasma resonance peak employed to determine doping in SiC. United States. https://doi.org/10.1016/j.infrared.2015.07.007
Engelbrecht, J. A. A., van Rooyen, I. J., Henry, A., Janzen, E., and Sephton, B. Thu .
"Notes on the plasma resonance peak employed to determine doping in SiC". United States. https://doi.org/10.1016/j.infrared.2015.07.007. https://www.osti.gov/servlets/purl/1294505.
@article{osti_1294505,
title = {Notes on the plasma resonance peak employed to determine doping in SiC},
author = {Engelbrecht, J. A. A. and van Rooyen, I. J. and Henry, A. and Janzen, E. and Sephton, B.},
abstractNote = {In this study, the doping level of a semiconductor material can be determined using the plasma resonance frequency to obtain the carrier concentration associated with doping. This paper provides an overview of the procedure for the three most common polytypes of SiC. Results for 3C-SiC are presented and discussed. In phosphorus doped samples analysed, it is submitted that the 2nd plasma resonance cannot be detected due to high values of the free carrier damping constant γ.},
doi = {10.1016/j.infrared.2015.07.007},
journal = {Infrared Physics and Technology},
number = C,
volume = 72,
place = {United States},
year = {Thu Jul 23 00:00:00 EDT 2015},
month = {Thu Jul 23 00:00:00 EDT 2015}
}
Free Publicly Available Full Text
Publisher's Version of Record
Other availability
Cited by: 4 works
Citation information provided by
Web of Science
Web of Science
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Infrared reflectance studies of bulk and epitaxial‐film n ‐type GaAs
journal, January 1977
- Holm, R. T.; Gibson, J. W.; Palik, E. D.
- Journal of Applied Physics, Vol. 48, Issue 1
Infrared and electrical characterization of multilayered n ‐type GaAs wafers
journal, February 1979
- Holm, R. T.; Calviello, J. A.
- Journal of Applied Physics, Vol. 50, Issue 2
Infrared reflectivity measurements on bulk and epitaxial GaSb. (Carrier concentration and mobility measurements)
journal, May 1980
- Pickering, C.
- Journal of Physics C: Solid State Physics, Vol. 13, Issue 15
Studies of the Ga1-xI^As1-ySby quaternary alloy system:-II characterisation by far-infrared reflectance spectroscopy
journal, January 1986
- Pickering, C.
- Journal of Electronic Materials, Vol. 15, Issue 1
Infrared reflectance evaluation of chemically vapor deposited β‐SiC films grown on Si substrates
journal, August 1986
- Holm, R. T.; Klein, P. H.; Nordquist, P. E. R.
- Journal of Applied Physics, Vol. 60, Issue 4
Non-destructive determination of free carrier density of epitaxial layers of GaSb by IR reflectivity measurement
journal, December 1987
- Schirar, S.; Bayo, L.; Melouah, A.
- Thin Solid Films, Vol. 155, Issue 1
Optical Determination of Carrier Concentration and Mobility in p and n Bulk GaSb by Infrared Reflectivity Spectral Analysis
journal, January 1992
- Mezerreg, A.; Llinares, C.; Montaner, A.
- physica status solidi (b), Vol. 169, Issue 1
Far‐infrared measurements of the mobility and carrier concentration in lightly doped GaAs on Si(100)
journal, July 1992
- Morley, S.; Zahn, D. R. T.; Eickhoff, T.
- Journal of Applied Physics, Vol. 72, Issue 2
Investigation and modeling of the infrared optical properties of direct current sputtered SiC films on silicon
journal, September 2000
- Lei, Y. M.; Yu, Y. H.; Cheng, L. L.
- Journal of Applied Physics, Vol. 88, Issue 5
From Transport Measurements to Infrared Reflectance Spectra of n-Type Doped 4H-SiC Layer Stacks
journal, September 2003
- Pernot, Julien; Camassel, Jean; Peyre, Hervé
- Materials Science Forum, Vol. 433-436
Characterization of Carrier Concentration and Mobility in n-type SiC Wafers Using Infrared Reflectance Spectroscopy
journal, August 2004
- Narita, Katsutoshi; Hijikata, Yasuto; Yaguchi, Hiroyuki
- Japanese Journal of Applied Physics, Vol. 43, Issue 8A
Simultaneous Determination of Carrier Concentration, Mobility, and Thickness of SiC Homoepilayers by Infrared Reflectance Spectroscopy
journal, November 2006
- Oishi, Shingo; Hijikata, Yasuto; Yaguchi, Hiroyuki
- Japanese Journal of Applied Physics, Vol. 45, Issue No. 46
Simultaneous Determination of the Carrier Concentration, Mobility and Thickness of SiC Homo-Epilayers Using Terahertz Reflectance Spectroscopy
journal, September 2007
- Oishi, Shingo; Hijikata, Yasuto; Yaguchi, Hiroyuki
- Materials Science Forum, Vol. 556-557
Modeling the infrared reflectance of n–/n+ SiC layers on top of n+ SiC substrates for epitaxy control application
journal, January 2003
- Camassel, J.; Pernot, J.; Wang, H. Y.
- physica status solidi (a), Vol. 195, Issue 1
Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates
journal, May 2012
- Dong, Lin; Sun, Guosheng; Zheng, Liu
- Journal of Physics D: Applied Physics, Vol. 45, Issue 24
Characterization of 4H—SiC substrates and epilayers by Fourier transform infrared reflectance spectroscopy
journal, April 2012
- Dong, Lin; Sun, Guo-Sheng; Zheng, Liu
- Chinese Physics B, Vol. 21, Issue 4
Influence of surface roughness and interfacial layer on the infrared spectra of V-CVD grown 3C-SiC/Si (1 0 0) epilayers
journal, October 2012
- Talwar, Devki N.; Feng, Zhe Chuan; Liu, Chee Wee
- Semiconductor Science and Technology, Vol. 27, Issue 11
Nondestructive and Contactless Characterization Method for Spatial Mapping of the Thickness and Electrical Properties in Homo-Epitaxially Grown SiC Epilayers Using Infrared Reflectance Spectroscopy
book, October 2012
- Yoshida, Sadafumi; Hijikata, Yasuto; Yaguchi, Hiroyuki
- Physics and Technology of Silicon Carbide Devices
Neutron irradiation effects in SiC
journal, August 2009
- Brink, D. J.; Malherbe, J. B.; Camassel, J.
- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 267, Issue 16
Investigation of longitudinal-optical phonon-plasmon coupled modes in SiC epitaxial film using fourier transform infrared reflection
journal, April 2005
- Sunkari, Swapna; Mazzola, M. S.; Mazzola, J. P.
- Journal of Electronic Materials, Vol. 34, Issue 4
The classical oscillator model and dielectric constants extracted from infrared reflectivity measurements
journal, July 2007
- Kroon, R. E.
- Infrared Physics & Technology, Vol. 51, Issue 1
Infrared Properties of Cubic Silicon Carbide Films
journal, January 1959
- Spitzer, W. G.; Kleinman, D. A.; Frosch, C. J.
- Physical Review, Vol. 113, Issue 1
Infrared Properties of Hexagonal Silicon Carbide
journal, January 1959
- Spitzer, W. G.; Kleinman, D.; Walsh, D.
- Physical Review, Vol. 113, Issue 1
Static Dielectric Constant of SiC
journal, September 1970
- Patrick, Lyle; Choyke, W. J.
- Physical Review B, Vol. 2, Issue 6
Infrared reflectance of thick p ‐type porous SiC layers
journal, August 1996
- MacMillan, M. F.; Devaty, R. P.; Choyke, W. J.
- Journal of Applied Physics, Vol. 80, Issue 4
Carrier concentration and lattice absorption in bulk and epitaxial silicon carbide determined using infrared ellipsometry
journal, October 1999
- Tiwald, Thomas E.; Woollam, John A.; Zollner, Stefan
- Physical Review B, Vol. 60, Issue 16
Infrared Investigation of Implantation Damage and Implantation Damage Annealing in 4H-SiC
journal, January 2001
- Pernot, Julien; Bluet, Jean Marie; Camassel, Jean
- Materials Science Forum, Vol. 353-356
Spatial Mapping of the Carrier Concentration and Mobility in SiC Wafers by Micro Fourier-Transform Infrared Spectroscopy
journal, April 2002
- Yaguchi, Hiroyuki; Narita, K.; Hijikata, Yasuto
- Materials Science Forum, Vol. 389-393
Raman Imaging Characterization of Structural and Electrical Properties in 4H SiC
journal, June 2004
- Mermoux, Michel; Crisci, Alexandre; Baillet, Francis
- Materials Science Forum, Vol. 457-460
Effective Mass of Electrons in Quantum-Well-Like Stacking-Fault Gap States in Silicon Carbide
journal, September 2003
- Iwata, Hisaomi; Lindefelt, Ulf; Öberg, Sven
- Materials Science Forum, Vol. 433-436
Raman scattering from anisotropic LO‐phonon–plasmon–coupled mode in n ‐type 4H– and 6H–SiC
journal, August 1995
- Harima, Hiroshi; Nakashima, Shin‐ichi; Uemura, Tomoki
- Journal of Applied Physics, Vol. 78, Issue 3
The effect of grain size and phosphorous-doping of polycrystalline 3C–SiC on infrared reflectance spectra
journal, March 2012
- van Rooyen, I. J.; Engelbrecht, J. A. A.; Henry, A.
- Journal of Nuclear Materials, Vol. 422, Issue 1-3
Characterization of the free‐carrier concentrations in doped β‐SiC crystals by Raman scattering
journal, January 1987
- Yugami, H.; Nakashima, S.; Mitsuishi, A.
- Journal of Applied Physics, Vol. 61, Issue 1
Raman scattering from LO phonon-plasmon coupled modes and Hall-effect in n -type silicon carbide 4H–SiC
journal, November 2001
- Chafai, M.; Jaouhari, A.; Torres, A.
- Journal of Applied Physics, Vol. 90, Issue 10
The influence of various dielectric parameters on the reststrahlen region of SiC
journal, February 2011
- Engelbrecht, J. A. A.; van Rooyen, I. J.
- Physica B: Condensed Matter, Vol. 406, Issue 3
Works referencing / citing this record:
IR spectra of carbon-vacancy clusters in the topochemical transformation of silicon into silicon carbide
journal, December 2017
- Grudinkin, S. A.; Kukushkin, S. A.; Osipov, A. V.
- Physics of the Solid State, Vol. 59, Issue 12