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This content will become publicly available on January 1, 2017

Title: High voltage and high current density vertical GaN power diodes

We report on the realization of a GaN high voltage vertical p-n diode operating at > 3.9 kV breakdown with a specific on-resistance < 0.9 mΩ.cm2. Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density > 1.4 kA/cm2. An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. Furthermore this suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [2]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Lehigh Univ., Bethlehem, PA (United States)
Publication Date:
OSTI Identifier:
1289617
Report Number(s):
SAND--2016-7478J
Journal ID: ISSN 0013-5194; 646341
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Electronics Letters
Additional Journal Information:
Journal Volume: 52; Journal Issue: 13; Journal ID: ISSN 0013-5194
Publisher:
Institution of Engineering and Technology (IET)
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 30 DIRECT ENERGY CONVERSION