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Title: Fabrication and characterization of a co-planar detector in diamond for low energy single ion implantation

Abstract

We demonstrate low energy single ion detection using a co-planar detector fabricated on a diamond substrate and characterized by ion beam induced charge collection. Histograms are taken with low fluence ion pulses illustrating quantized ion detection down to a single ion with a signal-to-noise ratio of approximately 10. We anticipate that this detection technique can serve as a basis to optimize the yield of single color centers in diamond. In conclusion, the ability to count ions into a diamond substrate is expected to reduce the uncertainty in the yield of color center formation by removing Poisson statistics from the implantation process.

Authors:
 [1];  [1];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1301988
Alternate Identifier(s):
OSTI ID: 1287754
Report Number(s):
SAND-2016-4671J
Journal ID: ISSN 0003-6951; 640339; TRN: US1700086
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY

Citation Formats

Abraham, John Bishoy Sam, Pacheco, Jose L., Aguirre, Brandon Adrian, Vizkelethy, Gyorgy, and Bielejec, Edward S. Fabrication and characterization of a co-planar detector in diamond for low energy single ion implantation. United States: N. p., 2016. Web. doi:10.1063/1.4960968.
Abraham, John Bishoy Sam, Pacheco, Jose L., Aguirre, Brandon Adrian, Vizkelethy, Gyorgy, & Bielejec, Edward S. Fabrication and characterization of a co-planar detector in diamond for low energy single ion implantation. United States. https://doi.org/10.1063/1.4960968
Abraham, John Bishoy Sam, Pacheco, Jose L., Aguirre, Brandon Adrian, Vizkelethy, Gyorgy, and Bielejec, Edward S. Tue . "Fabrication and characterization of a co-planar detector in diamond for low energy single ion implantation". United States. https://doi.org/10.1063/1.4960968. https://www.osti.gov/servlets/purl/1301988.
@article{osti_1301988,
title = {Fabrication and characterization of a co-planar detector in diamond for low energy single ion implantation},
author = {Abraham, John Bishoy Sam and Pacheco, Jose L. and Aguirre, Brandon Adrian and Vizkelethy, Gyorgy and Bielejec, Edward S.},
abstractNote = {We demonstrate low energy single ion detection using a co-planar detector fabricated on a diamond substrate and characterized by ion beam induced charge collection. Histograms are taken with low fluence ion pulses illustrating quantized ion detection down to a single ion with a signal-to-noise ratio of approximately 10. We anticipate that this detection technique can serve as a basis to optimize the yield of single color centers in diamond. In conclusion, the ability to count ions into a diamond substrate is expected to reduce the uncertainty in the yield of color center formation by removing Poisson statistics from the implantation process.},
doi = {10.1063/1.4960968},
journal = {Applied Physics Letters},
number = ,
volume = 109,
place = {United States},
year = {Tue Aug 09 00:00:00 EDT 2016},
month = {Tue Aug 09 00:00:00 EDT 2016}
}

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Works referenced in this record:

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Works referencing / citing this record:

Quantum Micro–Nano Devices Fabricated in Diamond by Femtosecond Laser and Ion Irradiation
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Scalable focused ion beam creation of nearly lifetime-limited single quantum emitters in diamond nanostructures
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Quantum nanophotonics with group IV defects in diamond
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Quantum Nanophotonics with Group IV defects in Diamond
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