DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Pulse Thermal Processing for Low Thermal Budget Integration of IGZO Thin Film Transistors

Abstract

Pulse thermal processing (PTP) has been explored for low thermal budget integration of indium gallium zinc oxide (IGZO) thin film transistors (TFTs). The IGZO TFTs are exposed to a broadband (0.2-1.4 m) arc lamp radiation spectrum with 100 pulses of 1 msec pulse width. The impact of radiant exposure power on the TFT performance was analyzed in terms of the switching characteristics and bias stress reliability characteristics, respectively. The PTP treated IGZO TFTs with power density of 3.95 kW/cm2 and 0.1 sec total irradiation time showed comparable switching properties, at significantly lower thermal budget, to furnace annealed IGZO TFT. The typical field effect mobility FE, threshold voltage VT, and sub-threshold gate swing S.S were calculated to be 7.8 cm2/ V s, 8.1 V, and 0.22 V/ decade, respectively. The observed performance shows promise for low thermal budget TFT integration on flexible substrates exploiting the large-area, scalable PTP technology.

Authors:
; ; ;
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1839487
Alternate Identifier(s):
OSTI ID: 1286774
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Published Article
Journal Name:
IEEE Journal of the Electron Devices Society
Additional Journal Information:
Journal Name: IEEE Journal of the Electron Devices Society Journal Volume: 3 Journal Issue: 3; Journal ID: ISSN 2168-6734
Publisher:
Institute of Electrical and Electronics Engineers
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Noh, Joo Hyon, Joshi, Pooran C., Kuruganti, Teja, and Rack, Philip D. Pulse Thermal Processing for Low Thermal Budget Integration of IGZO Thin Film Transistors. United States: N. p., 2015. Web. doi:10.1109/JEDS.2014.2376411.
Noh, Joo Hyon, Joshi, Pooran C., Kuruganti, Teja, & Rack, Philip D. Pulse Thermal Processing for Low Thermal Budget Integration of IGZO Thin Film Transistors. United States. https://doi.org/10.1109/JEDS.2014.2376411
Noh, Joo Hyon, Joshi, Pooran C., Kuruganti, Teja, and Rack, Philip D. Fri . "Pulse Thermal Processing for Low Thermal Budget Integration of IGZO Thin Film Transistors". United States. https://doi.org/10.1109/JEDS.2014.2376411.
@article{osti_1839487,
title = {Pulse Thermal Processing for Low Thermal Budget Integration of IGZO Thin Film Transistors},
author = {Noh, Joo Hyon and Joshi, Pooran C. and Kuruganti, Teja and Rack, Philip D.},
abstractNote = {Pulse thermal processing (PTP) has been explored for low thermal budget integration of indium gallium zinc oxide (IGZO) thin film transistors (TFTs). The IGZO TFTs are exposed to a broadband (0.2-1.4 m) arc lamp radiation spectrum with 100 pulses of 1 msec pulse width. The impact of radiant exposure power on the TFT performance was analyzed in terms of the switching characteristics and bias stress reliability characteristics, respectively. The PTP treated IGZO TFTs with power density of 3.95 kW/cm2 and 0.1 sec total irradiation time showed comparable switching properties, at significantly lower thermal budget, to furnace annealed IGZO TFT. The typical field effect mobility FE, threshold voltage VT, and sub-threshold gate swing S.S were calculated to be 7.8 cm2/ V s, 8.1 V, and 0.22 V/ decade, respectively. The observed performance shows promise for low thermal budget TFT integration on flexible substrates exploiting the large-area, scalable PTP technology.},
doi = {10.1109/JEDS.2014.2376411},
journal = {IEEE Journal of the Electron Devices Society},
number = 3,
volume = 3,
place = {United States},
year = {Fri May 01 00:00:00 EDT 2015},
month = {Fri May 01 00:00:00 EDT 2015}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1109/JEDS.2014.2376411

Citation Metrics:
Cited by: 5 works
Citation information provided by
Web of Science

Save / Share: