Pulse Thermal Processing for Low Thermal Budget Integration of IGZO Thin Film Transistors
Abstract
Pulse thermal processing (PTP) has been explored for low thermal budget integration of indium gallium zinc oxide (IGZO) thin film transistors (TFTs). The IGZO TFTs are exposed to a broadband (0.2-1.4 m) arc lamp radiation spectrum with 100 pulses of 1 msec pulse width. The impact of radiant exposure power on the TFT performance was analyzed in terms of the switching characteristics and bias stress reliability characteristics, respectively. The PTP treated IGZO TFTs with power density of 3.95 kW/cm2 and 0.1 sec total irradiation time showed comparable switching properties, at significantly lower thermal budget, to furnace annealed IGZO TFT. The typical field effect mobility FE, threshold voltage VT, and sub-threshold gate swing S.S were calculated to be 7.8 cm2/ V s, 8.1 V, and 0.22 V/ decade, respectively. The observed performance shows promise for low thermal budget TFT integration on flexible substrates exploiting the large-area, scalable PTP technology.
- Authors:
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- OSTI Identifier:
- 1839487
- Alternate Identifier(s):
- OSTI ID: 1286774
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Published Article
- Journal Name:
- IEEE Journal of the Electron Devices Society
- Additional Journal Information:
- Journal Name: IEEE Journal of the Electron Devices Society Journal Volume: 3 Journal Issue: 3; Journal ID: ISSN 2168-6734
- Publisher:
- Institute of Electrical and Electronics Engineers
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Noh, Joo Hyon, Joshi, Pooran C., Kuruganti, Teja, and Rack, Philip D. Pulse Thermal Processing for Low Thermal Budget Integration of IGZO Thin Film Transistors. United States: N. p., 2015.
Web. doi:10.1109/JEDS.2014.2376411.
Noh, Joo Hyon, Joshi, Pooran C., Kuruganti, Teja, & Rack, Philip D. Pulse Thermal Processing for Low Thermal Budget Integration of IGZO Thin Film Transistors. United States. https://doi.org/10.1109/JEDS.2014.2376411
Noh, Joo Hyon, Joshi, Pooran C., Kuruganti, Teja, and Rack, Philip D. Fri .
"Pulse Thermal Processing for Low Thermal Budget Integration of IGZO Thin Film Transistors". United States. https://doi.org/10.1109/JEDS.2014.2376411.
@article{osti_1839487,
title = {Pulse Thermal Processing for Low Thermal Budget Integration of IGZO Thin Film Transistors},
author = {Noh, Joo Hyon and Joshi, Pooran C. and Kuruganti, Teja and Rack, Philip D.},
abstractNote = {Pulse thermal processing (PTP) has been explored for low thermal budget integration of indium gallium zinc oxide (IGZO) thin film transistors (TFTs). The IGZO TFTs are exposed to a broadband (0.2-1.4 m) arc lamp radiation spectrum with 100 pulses of 1 msec pulse width. The impact of radiant exposure power on the TFT performance was analyzed in terms of the switching characteristics and bias stress reliability characteristics, respectively. The PTP treated IGZO TFTs with power density of 3.95 kW/cm2 and 0.1 sec total irradiation time showed comparable switching properties, at significantly lower thermal budget, to furnace annealed IGZO TFT. The typical field effect mobility FE, threshold voltage VT, and sub-threshold gate swing S.S were calculated to be 7.8 cm2/ V s, 8.1 V, and 0.22 V/ decade, respectively. The observed performance shows promise for low thermal budget TFT integration on flexible substrates exploiting the large-area, scalable PTP technology.},
doi = {10.1109/JEDS.2014.2376411},
journal = {IEEE Journal of the Electron Devices Society},
number = 3,
volume = 3,
place = {United States},
year = {Fri May 01 00:00:00 EDT 2015},
month = {Fri May 01 00:00:00 EDT 2015}
}
https://doi.org/10.1109/JEDS.2014.2376411
Web of Science