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This content will become publicly available on April 11, 2017

Title: Enhanced light extraction in tunnel junction-enabled top emitting UV LEDs

The efficiency of ultra violet LEDs has been critically limited by the absorption losses in p-type and metal layers. In this work, surface roughening based light extraction structures are combined with tunneling based p-contacts to realize highly efficient top-side light extraction efficiency in UV LEDs. Surface roughening of the top n-type AlGaN contact layer is demonstrated using self-assembled Ni nano-clusters as etch mask. The top surface roughened LEDs were found to enhance external quantum efficiency by over 40% for UV LEDs with a peak emission wavelength of 326 nm. The method described here can enable highly efficient UV LEDs without the need for complex manufacturing methods such as flip chip bonding.
Authors:
 [1] ;  [2] ;  [1] ;  [1] ;  [2] ;  [2] ;  [3]
  1. The Ohio State Univ., Columbus, OH (United States). Dept of Electrical and Computer Engineering
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  3. The Ohio State Univ., Columbus, OH (United States). Dept of Electrical and Computer Engineering; The Ohio State Univ., Columbus, OH (United States). Dept of Materials Science and Engineering
Publication Date:
OSTI Identifier:
1285956
Report Number(s):
SAND2016--7211J
Journal ID: ISSN 1882-0778; 646157
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Applied Physics Express
Additional Journal Information:
Journal Volume: 9; Journal Issue: 5; Journal ID: ISSN 1882-0778
Publisher:
Japan Society of Applied Physics
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE