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Title: Finite-size effects of hysteretic dynamics in multilayer graphene on a ferroelectric

The origin and influence of finite-size effects on the nonlinear dynamics of space charge stored by multilayer graphene on a ferroelectric and resistivity of graphene channel were analyzed. In this paper, we develop a self-consistent approach combining the solution of electrostatic problems with the nonlinear Landau-Khalatnikov equations for a ferroelectric. The size-dependent behaviors are governed by the relations between the thicknesses of multilayer graphene, ferroelectric film, and the dielectric layer. The appearance of charge and electroresistance hysteresis loops and their versatility stem from the interplay of polarization reversal dynamics and its incomplete screening in an alternating electric field. These features are mostly determined by the dielectric layer thickness. The derived analytical expressions for electric fields and space-charge-density distribution in a multilayer system enable knowledge-driven design of graphene-on-ferroelectric heterostructures with advanced performance. We further investigate the effects of spatially nonuniform ferroelectric domain structures on the graphene layers’ conductivity and predict its dramatic increase under the transition from multi- to single-domain state in a ferroelectric. Finally, this intriguing effect can open possibilities for the graphene-based sensors and explore the underlying physical mechanisms in the operation of graphene field-effect transistor with ferroelectric gating.
Authors:
 [1] ;  [2] ;  [1] ;  [3] ;  [4] ;  [5]
  1. National Academy of Sciences of Ukraine (NASU), Kyiv (Ukraine). Inst. of Physics
  2. Taras Shevchenko Kyiv National Univ., Kyiv (Ukraine). Physics Faculty
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences. Materials Science and Technology Division
  4. National Academy of Sciences of Ukraine (NASU), Kyiv (Ukraine). Inst. for Problems of Material Sciences
  5. National Academy of Sciences of Ukraine (NASU), Kyiv (Ukraine). V.E. Lashkarev Inst. of Semiconductor Physics
Publication Date:
OSTI Identifier:
1265594
Grant/Contract Number:
AC05-00OR22725; 35-02-15
Type:
Accepted Manuscript
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 91; Journal Issue: 23; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society (APS)
Research Org:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS); National Academy of Sciences of Ukraine (NASU), Kyiv (Ukraine)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Academy of Sciences of Ukraine (NASU)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE