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Title: Degradation mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs

We investigated the degradation mechanism of Ti/Al/Ni/Au-based Ohmic metallization on AlGaN/GaN high electron mobility transistors upon exposure to buffer oxide etchant (BOE). The major effect of BOE on the Ohmic metal was an increase of sheet resistance from 2.89 to 3.69 Ω/ₜafter 3 min BOE treatment. The alloyed Ohmic metallization consisted 3–5 μm Ni-Al alloy islands surrounded by Au-Al alloy-rings. The morphology of both the islands and ring areas became flatter after BOE etching. Lastly, we used energy dispersive x-ray analysis and Auger electron microscopy to analyze the compositions and metal distributions in the metal alloys prior to and after BOE exposure.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [2] ;  [2] ;  [2] ;  [3] ;  [4]
  1. Univ. of Florida, Gainesville, FL (United States). Dept. of Chemical Engineering
  2. Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
  4. Hebei Univ. of Technology, Tianjing (China). Dept. of Electronic Science and Technology
Publication Date:
OSTI Identifier:
1265486
Grant/Contract Number:
AC05-00OR22725
Type:
Accepted Manuscript
Journal Name:
Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics
Additional Journal Information:
Journal Volume: 33; Journal Issue: 3; Journal ID: ISSN 2166-2746
Publisher:
American Vacuum Society/AIP
Research Org:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org:
USDOE Office of Science (SC)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE