Self-heating and failure in scalable graphene devices
Abstract
Self-heating induced failure of graphene devices synthesized from both chemical vapor deposition (CVD) and epitaxial means is compared using a combination of infrared thermography and Raman imaging. Despite a larger thermal resistance, CVD devices dissipate >3x the amount of power before failure than their epitaxial counterparts. Furthermore, the discrepancy arises due to morphological irregularities implicit to the graphene synthesis method that induce localized heating. Morphology, rather than thermal resistance, therefore dictates power handling limits in graphene devices.
- Authors:
-
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1262367
- Alternate Identifier(s):
- OSTI ID: 1338306
- Report Number(s):
- SAND-2016-3093J; SAND-2015-10741J
Journal ID: ISSN 2045-2322; srep26457
- Grant/Contract Number:
- AC04-94AL85000
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Scientific Reports
- Additional Journal Information:
- Journal Volume: 6; Journal ID: ISSN 2045-2322
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; electronic properties and devices; synthesis and processing; 36 MATERIALS SCIENCE
Citation Formats
Beechem, Thomas E., Shaffer, Ryan A., Nogan, John, Ohta, Taisuke, Hamilton, Allister B., McDonald, Anthony E., and Howell, Stephen W. Self-heating and failure in scalable graphene devices. United States: N. p., 2016.
Web. doi:10.1038/srep26457.
Beechem, Thomas E., Shaffer, Ryan A., Nogan, John, Ohta, Taisuke, Hamilton, Allister B., McDonald, Anthony E., & Howell, Stephen W. Self-heating and failure in scalable graphene devices. United States. https://doi.org/10.1038/srep26457
Beechem, Thomas E., Shaffer, Ryan A., Nogan, John, Ohta, Taisuke, Hamilton, Allister B., McDonald, Anthony E., and Howell, Stephen W. Thu .
"Self-heating and failure in scalable graphene devices". United States. https://doi.org/10.1038/srep26457. https://www.osti.gov/servlets/purl/1262367.
@article{osti_1262367,
title = {Self-heating and failure in scalable graphene devices},
author = {Beechem, Thomas E. and Shaffer, Ryan A. and Nogan, John and Ohta, Taisuke and Hamilton, Allister B. and McDonald, Anthony E. and Howell, Stephen W.},
abstractNote = {Self-heating induced failure of graphene devices synthesized from both chemical vapor deposition (CVD) and epitaxial means is compared using a combination of infrared thermography and Raman imaging. Despite a larger thermal resistance, CVD devices dissipate >3x the amount of power before failure than their epitaxial counterparts. Furthermore, the discrepancy arises due to morphological irregularities implicit to the graphene synthesis method that induce localized heating. Morphology, rather than thermal resistance, therefore dictates power handling limits in graphene devices.},
doi = {10.1038/srep26457},
journal = {Scientific Reports},
number = ,
volume = 6,
place = {United States},
year = {Thu Jun 09 00:00:00 EDT 2016},
month = {Thu Jun 09 00:00:00 EDT 2016}
}
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