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Title: A High Temperature Silicon Carbide mosfet Power Module With Integrated Silicon-On-Insulator-Based Gate Drive

Here we present a board-level integrated silicon carbide (SiC) MOSFET power module for high temperature and high power density application. Specifically, a silicon-on-insulator (SOI)-based gate driver capable of operating at 200°C ambient temperature is designed and fabricated. The sourcing and sinking current capability of the gate driver are tested under various ambient temperatures. Also, a 1200 V/100 A SiC MOSFET phase-leg power module is developed utilizing high temperature packaging technologies. The static characteristics, switching performance, and short-circuit behavior of the fabricated power module are fully evaluated at different temperatures. Moreover, a buck converter prototype composed of the SOI gate driver and SiC power module is built for high temperature continuous operation. The converter is operated at different switching frequencies up to 100 kHz, with its junction temperature monitored by a thermosensitive electrical parameter and compared with thermal simulation results. The experimental results from the continuous operation demonstrate the high temperature capability of the power module at a junction temperature greater than 225°C.
Authors:
 [1] ;  [2] ;  [1] ;  [1] ;  [1] ;  [1] ;  [3]
  1. Univ. of Tennessee, Knoxville, TN (United States). Dept. of Electrical Engineering & Computer Science; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). National Transportation Research Center
  2. Univ. of Tennessee, Knoxville, TN (United States). Dept. of Electrical Engineering & Computer Science
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). National Transportation Research Center
Publication Date:
OSTI Identifier:
1261403
Grant/Contract Number:
AC05-00OR22725; EEC-1041877
Type:
Accepted Manuscript
Journal Name:
IEEE Transactions on Power Electronics
Additional Journal Information:
Journal Volume: 30; Journal Issue: 3; Journal ID: ISSN 0885-8993
Publisher:
IEEE
Research Org:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Power Electronics and Electric Machinery Research Facility
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Vehicle Technologies Office (EE-3V)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE Power module; silicon carbide (SiC) MOSFET; silicon-on-insulator (SOI); thermosensitive electrical parameter (TSEP)