Theory of multiple quantum dot formation in strained-layer heteroepitaxy
Abstract
For this, we develop a theory for the experimentally observed formation of multiple quantum dots (QDs) in strained-layer heteroepitaxy based on surface morphological stability analysis of a coherently strained epitaxial thin film on a crystalline substrate. Using a fully nonlinear model of surface morphological evolution that accounts for a wetting potential contribution to the epitaxial film's free energy as well as surface diffusional anisotropy, we demonstrate the formation of multiple QD patterns in self-consistent dynamical simulations of the evolution of the epitaxial film surface perturbed from its planar state. The simulation predictions are supported by weakly nonlinear analysis of the epitaxial film surface morphological stability. We find that, in addition to the Stranski-Krastanow instability, long-wavelength perturbations from the planar film surface morphology can trigger a nonlinear instability, resulting in the splitting of a single QD into multiple QDs of smaller sizes, and predict the critical wavelength of the film surface perturbation for the onset of the nonlinear tip-splitting instability. The theory provides a fundamental interpretation for the observations of “QD pairs” or “double QDs” and other multiple QDs reported in experimental studies of epitaxial growth of semiconductor strained layers and sets the stage for precise engineering of tunable-size nanoscale surfacemore »
- Authors:
-
- Univ. of Massachusetts, Amherst, MA (United States). Dept. of Chemical Engineering
- Publication Date:
- Research Org.:
- Univ. of Massachusetts, Amherst, MA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
- OSTI Identifier:
- 1467833
- Alternate Identifier(s):
- OSTI ID: 1261224
- Grant/Contract Number:
- FG02-07ER46407
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 109; Journal Issue: 2; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; diffusion; surface finishing; surface patterning; III-V semiconductors; quantum dots; surface morphology; epitaxy; surface strains; anisotropy; surface dynamics
Citation Formats
Du, Lin, and Maroudas, Dimitrios. Theory of multiple quantum dot formation in strained-layer heteroepitaxy. United States: N. p., 2016.
Web. doi:10.1063/1.4955409.
Du, Lin, & Maroudas, Dimitrios. Theory of multiple quantum dot formation in strained-layer heteroepitaxy. United States. https://doi.org/10.1063/1.4955409
Du, Lin, and Maroudas, Dimitrios. Mon .
"Theory of multiple quantum dot formation in strained-layer heteroepitaxy". United States. https://doi.org/10.1063/1.4955409. https://www.osti.gov/servlets/purl/1467833.
@article{osti_1467833,
title = {Theory of multiple quantum dot formation in strained-layer heteroepitaxy},
author = {Du, Lin and Maroudas, Dimitrios},
abstractNote = {For this, we develop a theory for the experimentally observed formation of multiple quantum dots (QDs) in strained-layer heteroepitaxy based on surface morphological stability analysis of a coherently strained epitaxial thin film on a crystalline substrate. Using a fully nonlinear model of surface morphological evolution that accounts for a wetting potential contribution to the epitaxial film's free energy as well as surface diffusional anisotropy, we demonstrate the formation of multiple QD patterns in self-consistent dynamical simulations of the evolution of the epitaxial film surface perturbed from its planar state. The simulation predictions are supported by weakly nonlinear analysis of the epitaxial film surface morphological stability. We find that, in addition to the Stranski-Krastanow instability, long-wavelength perturbations from the planar film surface morphology can trigger a nonlinear instability, resulting in the splitting of a single QD into multiple QDs of smaller sizes, and predict the critical wavelength of the film surface perturbation for the onset of the nonlinear tip-splitting instability. The theory provides a fundamental interpretation for the observations of “QD pairs” or “double QDs” and other multiple QDs reported in experimental studies of epitaxial growth of semiconductor strained layers and sets the stage for precise engineering of tunable-size nanoscale surface features in strained-layer heteroepitaxy by exploiting film surface nonlinear, pattern forming phenomena.},
doi = {10.1063/1.4955409},
journal = {Applied Physics Letters},
number = 2,
volume = 109,
place = {United States},
year = {Mon Jul 11 00:00:00 EDT 2016},
month = {Mon Jul 11 00:00:00 EDT 2016}
}
Web of Science
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Works referencing / citing this record:
Optimization of electrical treatment strategy for surface roughness reduction in conducting thin films
journal, September 2018
- Du, Lin; Maroudas, Dimitrios
- Journal of Applied Physics, Vol. 124, Issue 12
Design of semiconductor surface pits for fabrication of regular arrays of quantum dots and nanorings
journal, January 2019
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On the origin of ‘fuzz’ formation in plasma-facing materials
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Modeling of quantum dot and nanoring pattern formation on pit-patterned semiconductor substrates
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On the formation of multiple quantum dots inside elongated pits on semiconductor films deposited epitaxially on pit-patterned substrates
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Electromigration-guided composition patterns in thin alloy films: A computational study
journal, August 2020
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