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This content will become publicly available on July 1, 2017

Title: Fluorocarbon based atomic layer etching of Si3N4 and etching selectivity of SiO2 over Si3N4

Authors:
 [1] ;  [2] ;  [3] ;  [3] ;  [2]
  1. Department of Physics, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742
  2. Department of Materials Science and Engineering, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742
  3. Lam Research Corporation, 4400 Cushing Parkway, Fremont, California 94538
Publication Date:
OSTI Identifier:
1260000
Grant/Contract Number:
SC0001939
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Additional Journal Information:
Journal Volume: 34; Journal Issue: 4; Related Information: CHORUS Timestamp: 2016-07-01 13:07:17; Journal ID: ISSN 0734-2101
Publisher:
American Vacuum Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English