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Title: Determining the band alignment of TbAs:GaAs and TbAs:In0.53Ga0.47As

Here, we propose and systematically justify a band structure for TbAs nanoparticles in GaAs and In0.53Ga0.47As host matrices. Moreover, fluence-dependent optical-pump terahertz-probe measurements suggest the TbAs nanoparticles have a band gap and provide information on the carrier dynamics, which are determined by the band alignment. Spectrophotometry measurements provide the energy of optical transitions in the nanocomposite systems and reveal a large blue shift in the absorption energy when the host matrix is changed from In0.53Ga0.47As to GaAs. Finally, Hall data provides the approximate Fermi level in each system. From this data, we deduce that the TbAs:GaAs system forms a type I (straddling) heterojunction and the TbAs:In0.53Ga0.47As system forms a type II (staggered) heterojunction.
Authors:
 [1] ;  [1] ;  [2] ;  [3] ;  [1] ;  [4] ;  [4] ;  [1] ;  [1]
  1. Univ. of Delaware, Newark, DE (United States)
  2. Edinboro Univ. of Pennsylvania, PA (United States)
  3. Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
  4. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Publication Date:
OSTI Identifier:
1258025
Report Number(s):
LA-UR--15-26061
Journal ID: ISSN 0003-6951; APPLAB
Grant/Contract Number:
LDRD; DMR-1105137; AC52-06NA25396
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 10; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE