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Title: Carrier-induced transient defect mechanism for non-radiative recombination in InGaN light-emitting devices

Non-radiative recombination (NRR) of excited carriers poses a serious challenge to optoelectronic device efficiency. Understanding the mechanism is thus crucial to defect physics and technological applications. Here, by using first-principles calculations, we propose a new NRR mechanism, where excited carriers recombine via a Frenkel-pair (FP) defect formation. While in the ground state the FP is high in energy and is unlikely to form, in the electronic excited states its formation is enabled by a strong electron-phonon coupling of the excited carriers. As a result, this NRR mechanism is expected to be general for wide-gap semiconductors, rather than being limited to InGaN-based light emitting devices.
Authors:
 [1] ;  [2] ;  [3] ;  [2]
  1. Rensselaer Polytechnic Institute, Troy, NY (United States); Korea Basic Science Institute (KBSI), Daejeon (South Korea)
  2. Rensselaer Polytechnic Institute, Troy, NY (United States)
  3. Kongju National Univ., Kongju Chungnam (South Korea)
Publication Date:
OSTI Identifier:
1257833
Grant/Contract Number:
SC0002623
Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 6; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Research Org:
Rensselaer Polytechnic Institute, Troy, NY (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY electronic properties and materials; electronic structure