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This content will become publicly available on June 10, 2017

Title: III-V semiconductor nanoresonators-a new strategy for passive, active, and nonlinear all-dielectric metamaterials

We demonstrate 2D and multilayer dielectric metamaterials made from III–V semiconductors using a monolithic fabrication process. The resulting structures could be used to recompress chirped femtosecond optical pulses and in a variety of other optical applications requiring low loss. Moreover, these III–V all-dielectric metamaterials could enable novel active applications such as efficient nonlinear frequency converters, light emitters, detectors, and modulators.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
OSTI Identifier:
1257797
Report Number(s):
SAND--2016-4320J
Journal ID: ISSN 2195-1071; 639556; TRN: US1601757
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Advanced Optical Materials
Additional Journal Information:
Journal Name: Advanced Optical Materials; Journal ID: ISSN 2195-1071
Publisher:
Wiley
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY 3D metamaterials; III–V semiconductors; dielectric resonators; metasurfaces; Mie resonances