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This content will become publicly available on May 10, 2017

Title: (Invited) Comprehensive Assessment of Oxide Memristors As Post-CMOS Memory and Logic Devices

As CMOS technology approaches the end of its scaling, oxide-based memristors have become one of the leading candidates for post-CMOS memory and logic devices. In orderTo facilitate the understanding of physical switching mechanisms and accelerate experimental development of memristors, we have developed a three-dimensional fully-coupled electrical and thermal transport model, which captures all the important processes that drive memristive switching and is applicable for simulating a wide range of memristors. Moreover, the model is applied to simulate the RESET and SET switching in a 3D filamentary TaOx memristor. Extensive simulations show that the switching dynamics of the bipolar device is determined by thermally-activated field-dominant processes: with Joule heating, the raised temperature enables the movement of oxygen vacancies, and the field drift dominates the overall motion of vacancies. Simulated current-voltage hysteresis and device resistance profiles as a function of time and voltage during RESET and SET switching show good agreement with experimental measurement.
Authors:
 [1] ;  [1] ;  [1] ;  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
OSTI Identifier:
1257786
Report Number(s):
SAND2016--2238J
Journal ID: ISSN 1938-6737; 625634
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
ECS Transactions (Online)
Additional Journal Information:
Journal Name: ECS Transactions (Online); Journal Volume: 72; Journal Issue: 3; Journal ID: ISSN 1938-6737
Publisher:
Electrochemical Society
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY