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This content will become publicly available on February 2, 2017

Title: Direct observation of localized radial oxygen migration in functioning tantalum oxide memristors

Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in operando x-ray absorption spectromicroscopy and is used to microphysically describe accelerated evolution of conduction channel and device failure. Furthermore, the resulting ring-like patterns of oxygen concentration are modeled using thermophoretic forces and Fick diffusion, establishing the critical role of temperature-activated oxygen migration that has been under question lately.
Authors:
 [1] ;  [2] ;  [2] ;  [2] ; ;  [3] ;  [4] ;  [5] ;  [2]
  1. Hewlett Packard Labs., Palo Alto, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
  2. Hewlett Packard Labs., Palo Alto, CA (United States)
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
  4. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  5. Stanford Univ., Stanford, CA (United States)
Publication Date:
OSTI Identifier:
1256642
Report Number(s):
SLAC-PUB--16544
Journal ID: ISSN 0935-9648; arXiv:1602.01204
Grant/Contract Number:
AC02-76SF00515
Type:
Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 28; Journal Issue: 14; Journal ID: ISSN 0935-9648
Publisher:
Wiley
Research Org:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE ENG; MATSCI; SYNCHRAD