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This content will become publicly available on May 16, 2017

Title: Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells

Authors:
 [1] ;  [1] ;  [2] ;  [2] ;  [1]
  1. Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, USA
  2. NanoPower Research Laboratory, Rochester Institute of Technology, Rochester, New York 14623, USA
Publication Date:
OSTI Identifier:
1253224
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 119; Journal Issue: 19; Related Information: CHORUS Timestamp: 2016-05-16 13:10:16; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English