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Title: Electron transport in zinc-blende wurtzite biphasic gallium nitride nanowires and GaNFETs

Two-point and four-point probe electrical measurements of a biphasic gallium nitride nanowire and current–voltage characteristics of a gallium nitride nanowire based field effect transistor are reported. The biphasic gallium nitride nanowires have a crystalline homostructure consisting of wurtzite and zinc-blende phases that grow simultaneously in the longitudinal direction. There is a sharp transition of one to a few atomic layers between each phase. Here, all measurements showed high current densities. Evidence of single-phase current transport in the biphasic nanowire structure is discussed.
Authors:
 [1] ;  [1] ;  [2] ;  [2] ;  [3] ;  [1] ;  [1] ;  [4] ;  [4] ;  [5]
  1. Michigan State Univ., East Lansing, MI (United States)
  2. Zyvex Instruments, Richardson, TX (United States)
  3. Keithley Instruments, Inc., Cleveland, OH (United States)
  4. Howard Univ., Washington, D.C. (United States)
  5. NASA Goddard Space Flight Center, Greenbelt, MD (United States)
Publication Date:
OSTI Identifier:
1252695
Report Number(s):
SAND--2016-1052J
Journal ID: ISSN 0957-4484; 619144
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Nanotechnology
Additional Journal Information:
Journal Volume: 18; Journal Issue: 47; Journal ID: ISSN 0957-4484
Publisher:
IOP Publishing
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English