Resonant magneto-optic Kerr effect in the magnetic topological insulator Cr:(Sbx,Bi1–x)2Te3
Abstract
We report measurements of the polar Kerr effect, proportional to the out-of-plane component of the magnetization, in thin films of the magnetically doped topological insulator (Cr0.12Bi0.26Sb0.62)2Te3. Measurements of the complex Kerr angle ΘK were performed as a function of photon energy in the range 0.8eV < ω < 3.0eV. We observed a peak in the real part of ΘK(ω) and zero crossing in the imaginary part that we attribute to a resonant interaction with a spin-orbit avoided crossing located ≈1.6 eV above the Fermi energy. The resonant enhancement allows measurement of the temperature and magnetic field dependence of ΘK in the ultrathin film limit, d≥2 quintuple layers (QL). We find a sharp transition to zero remanent magnetization at 6 K for d < 8 QL, consistent with theories of the dependence of impurity spin interactions on film thickness and their location relative to topological insulator surfaces.
- Authors:
-
- Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Simon Fraser Univ., Burnaby, BC (Canada)
- Univ. of California, Los Angeles, CA (United States)
- Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Publication Date:
- Research Org.:
- SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1251565
- Alternate Identifier(s):
- OSTI ID: 1234116; OSTI ID: 1439980
- Report Number(s):
- SLAC-PUB-16522
Journal ID: ISSN 1098-0121; PRBMDO
- Grant/Contract Number:
- AC02-76SF00515; AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review. B, Condensed Matter and Materials Physics
- Additional Journal Information:
- Journal Volume: 92; Journal Issue: 21; Journal ID: ISSN 1098-0121
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Patankar, Shreyas, Hinton, J. P., Griesmar, Joel, Orenstein, J., Dodge, J. S., Kou, Xufeng, Pan, Lei, Wang, Kang L., Bestwick, A. J., Fox, E. J., Goldhaber-Gordon, D., Wang, Jing, and Zhang, Shou -Cheng. Resonant magneto-optic Kerr effect in the magnetic topological insulator Cr:(Sbx,Bi1–x)2Te3. United States: N. p., 2015.
Web. doi:10.1103/PhysRevB.92.214440.
Patankar, Shreyas, Hinton, J. P., Griesmar, Joel, Orenstein, J., Dodge, J. S., Kou, Xufeng, Pan, Lei, Wang, Kang L., Bestwick, A. J., Fox, E. J., Goldhaber-Gordon, D., Wang, Jing, & Zhang, Shou -Cheng. Resonant magneto-optic Kerr effect in the magnetic topological insulator Cr:(Sbx,Bi1–x)2Te3. United States. https://doi.org/10.1103/PhysRevB.92.214440
Patankar, Shreyas, Hinton, J. P., Griesmar, Joel, Orenstein, J., Dodge, J. S., Kou, Xufeng, Pan, Lei, Wang, Kang L., Bestwick, A. J., Fox, E. J., Goldhaber-Gordon, D., Wang, Jing, and Zhang, Shou -Cheng. Thu .
"Resonant magneto-optic Kerr effect in the magnetic topological insulator Cr:(Sbx,Bi1–x)2Te3". United States. https://doi.org/10.1103/PhysRevB.92.214440. https://www.osti.gov/servlets/purl/1251565.
@article{osti_1251565,
title = {Resonant magneto-optic Kerr effect in the magnetic topological insulator Cr:(Sbx,Bi1–x)2Te3},
author = {Patankar, Shreyas and Hinton, J. P. and Griesmar, Joel and Orenstein, J. and Dodge, J. S. and Kou, Xufeng and Pan, Lei and Wang, Kang L. and Bestwick, A. J. and Fox, E. J. and Goldhaber-Gordon, D. and Wang, Jing and Zhang, Shou -Cheng},
abstractNote = {We report measurements of the polar Kerr effect, proportional to the out-of-plane component of the magnetization, in thin films of the magnetically doped topological insulator (Cr0.12Bi0.26Sb0.62)2Te3. Measurements of the complex Kerr angle ΘK were performed as a function of photon energy in the range 0.8eV < ω < 3.0eV. We observed a peak in the real part of ΘK(ω) and zero crossing in the imaginary part that we attribute to a resonant interaction with a spin-orbit avoided crossing located ≈1.6 eV above the Fermi energy. The resonant enhancement allows measurement of the temperature and magnetic field dependence of ΘK in the ultrathin film limit, d≥2 quintuple layers (QL). We find a sharp transition to zero remanent magnetization at 6 K for d < 8 QL, consistent with theories of the dependence of impurity spin interactions on film thickness and their location relative to topological insulator surfaces.},
doi = {10.1103/PhysRevB.92.214440},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 21,
volume = 92,
place = {United States},
year = {Thu Dec 31 00:00:00 EST 2015},
month = {Thu Dec 31 00:00:00 EST 2015}
}
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