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This content will become publicly available on May 6, 2017

Title: Doping concentration dependence of the photoluminescence spectra of n-type GaAs nanowires

Authors:
 [1] ;  [1] ;  [2] ;  [3] ;  [2]
  1. Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089-0271, USA, Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089-0271, USA
  2. Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089-0271, USA, Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089-0271, USA, Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089-0271, USA
  3. Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089-0271, USA, Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089-0271, USA, Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089-0271, USA, Department of Physics, University of Southern California, Los Angeles, California 90089-0271, USA
Publication Date:
OSTI Identifier:
1251438
Grant/Contract Number:
SC0001013
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 18; Related Information: CHORUS Timestamp: 2016-05-06 13:05:48; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English