Correlations between In Situ Conductivity and Uniform-Height Epitaxial Morphology in Pb/Si(111)₋(7×7)

Jałochowski, M.; Zdyb, R.; Tringides, M. C.

doi:10.1103/PhysRevLett.116.086101

Title: Correlations between In Situ Conductivity and Uniform-Height Epitaxial Morphology in $Pb / Si (111) ₋ (7 \times 7)$

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Abstract

The growth of Pb on Si(111)-7x7 at temperatures from 72 K to 201 K has been investigated using in situ electrical resistivity measurements and Scanning Tunneling Microscopy (STM). For temperatures T>140 K the specific resistivity ρ(θ) vs coverage θ shows an unusual "hump", instead of the expected monotonic decrease with θ. This novel result correlates well with the formation of uniform height 8-layer Pb islands and the superdiffusive motion of the wetting layer, despite the low temperatures. A model of the film resistivity as two resistors in series, the amorphous wetting layer and the crystalline islands, explains quantitatively the resistivity dependence on θ.

Authors:

Jałochowski, M. ^[1]; Zdyb, R. ^[1]; Tringides, M. C. ^[2]

Maria Curie-Sklodowska Univ., Lublin (Poland)
Ames Lab. and Iowa State Univ., Ames, IA (United States)

Publication Date:: Tue Feb 23 00:00:00 EST 2016

Research Org.:: Ames Laboratory (AMES), Ames, IA (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1249345

Alternate Identifier(s):: OSTI ID: 1238822

Report Number(s):: IS-J-8964
Journal ID: ISSN 0031-9007; PRLTAO

Grant/Contract Number:: AC0207CH11358; 2014/13/B/ST5/04442

Resource Type:: Accepted Manuscript

Journal Name:: Physical Review Letters

Additional Journal Information:: Journal Volume: 116; Journal Issue: 8; Journal ID: ISSN 0031-9007

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Jałochowski, M., Zdyb, R., and Tringides, M. C. Correlations between In Situ Conductivity and Uniform-Height Epitaxial Morphology in Pb/Si(111)₋(7×7).  United States: N. p., 2016. 
Web.  doi:10.1103/PhysRevLett.116.086101.

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                    Jałochowski, M., Zdyb, R., & Tringides, M. C. Correlations between In Situ Conductivity and Uniform-Height Epitaxial Morphology in Pb/Si(111)₋(7×7).  United States.  https://doi.org/10.1103/PhysRevLett.116.086101

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                    Jałochowski, M., Zdyb, R., and Tringides, M. C. Tue .  
"Correlations between In Situ Conductivity and Uniform-Height Epitaxial Morphology in Pb/Si(111)₋(7×7)".  United States.  https://doi.org/10.1103/PhysRevLett.116.086101.  https://www.osti.gov/servlets/purl/1249345.

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@article{osti_1249345,

  title        = {Correlations between In Situ Conductivity and Uniform-Height Epitaxial Morphology in Pb/Si(111)₋(7×7)},

  author       = {Jałochowski, M. and Zdyb, R. and Tringides, M. C.},

  abstractNote = {The growth of Pb on Si(111)-7x7 at temperatures from 72 K to 201 K has been investigated using in situ electrical resistivity measurements and Scanning Tunneling Microscopy (STM). For temperatures T>140 K the specific resistivity ρ(θ) vs coverage θ shows an unusual "hump", instead of the expected monotonic decrease with θ. This novel result correlates well with the formation of uniform height 8-layer Pb islands and the superdiffusive motion of the wetting layer, despite the low temperatures. A model of the film resistivity as two resistors in series, the amorphous wetting layer and the crystalline islands, explains quantitatively the resistivity dependence on θ.},

  doi          = {10.1103/PhysRevLett.116.086101},

  journal      = {Physical Review Letters},

  number       = 8,

  volume       = 116,

  place        = {United States},

  year         = {Tue Feb 23 00:00:00 EST 2016},

  month        = {Tue Feb 23 00:00:00 EST 2016}

}

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Title: Correlations between In Situ Conductivity and Uniform-Height Epitaxial Morphology in Pb / Si ( 1 1 1 ) ₋ ( 7 × 7 )

Abstract

Citation Formats

Title: Correlations between In Situ Conductivity and Uniform-Height Epitaxial Morphology in $Pb / Si (111) ₋ (7 \times 7)$