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This content will become publicly available on February 23, 2017

Title: Correlations between In Situ Conductivity and Uniform-Height Epitaxial Morphology in Pb/Si(111)(7×7)

The growth of Pb on Si(111)-7x7 at temperatures from 72 K to 201 K has been investigated using in situ electrical resistivity measurements and Scanning Tunneling Microscopy (STM). For temperatures T>140 K the specific resistivity ρ(θ) vs coverage θ shows an unusual "hump", instead of the expected monotonic decrease with θ. This novel result correlates well with the formation of uniform height 8-layer Pb islands and the superdiffusive motion of the wetting layer, despite the low temperatures. A model of the film resistivity as two resistors in series, the amorphous wetting layer and the crystalline islands, explains quantitatively the resistivity dependence on θ.
Authors:
 [1] ;  [1] ;  [2]
  1. Maria Curie-Sklodowska Univ., Lublin (Poland)
  2. Ames Lab. and Iowa State Univ., Ames, IA (United States)
Publication Date:
OSTI Identifier:
1249345
Report Number(s):
IS-J--8964
Journal ID: ISSN 0031-9007; PRLTAO
Grant/Contract Number:
AC0207CH11358; 2014/13/B/ST5/04442
Type:
Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 116; Journal Issue: 8; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Research Org:
Ames Laboratory (AMES), Ames, IA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE