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Title: Selective layer disordering in intersubband Al0.028Ga0.972 N/AlN superlattices with silicon nitride capping layer

We demonstrate the selective layer disordering in intersubband Al0.028Ga0.972 N/AlN superlattices using a silicon nitride (SiNx) capping layer. The (SiNx) capped superlattice exhibits suppressed layer disordering under high-temperature annealing. In addition, the rate of layer disordering is reduced with increased SiNx thickness. The layer disordering is caused by Si diffusion, and the SiNx layer inhibits vacancy formation at the crystal surface and ultimately, the movement of Al and Ga atoms across the heterointerfaces. In conclusion, patterning of the SiNx layer results in selective layer disordering, an attractive method to integrate active and passive III–nitride-based intersubband devices.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
OSTI Identifier:
1248572
Report Number(s):
SAND--2016-0433J
Journal ID: ISSN 1882-0778; 618634
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Applied Physics Express
Additional Journal Information:
Journal Volume: 8; Journal Issue: 6; Journal ID: ISSN 1882-0778
Publisher:
Japan Society of Applied Physics
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English