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Title: Single-crystal sapphire microstructure for high-resolution synchrotron X-ray monochromators

Abstract

We report on the growth and characterization of several sapphire single crystals for the purpose of x-ray optics applications. Structural defects were studied by means of laboratory double-crystal X-ray diffractometry and white beam synchrotron-radiation topography. The investigations confirmed that the main defect types are dislocations. The best quality crystal was grown using the Kyropoulos technique with a dislocation density of 102-103 cm-2 and a small area with approximately 2*2 mm2 did not show dislocation contrast in many reflections and has suitable quality for application as a backscattering monochromator. As a result, a clear correlation between growth rate and dislocation density is observed, though growth rate is not the only parameter impacting the quality.

Authors:
 [1];  [2];  [2];  [2];  [2];  [3];  [2];  [2];  [2];  [4];  [5];  [6];  [6];  [7];  [8];  [9];  [9];  [10]
+ Show Author Affiliations
  1. Shubnikov Institute for Crystallography RAS, Moscow (Russia); Lomonosov Moscow State Univ., Moscow (Russia)
  2. Shubnikov Institute for Crystallography RAS, Moscow (Russia)
  3. Institute for Crystallography RAS, Kaluga (Russia)
  4. Julich Center for Neutron Science (JCNS) and Peter Grunberg Institute PGI, Julich (Germany); Univ. of Liege, Liege (Belgium); European Synchrotron Radiation Facility, Grenoble (France)
  5. Julich Center for Neutron Science (JCNS) and Peter Grunberg Institute PGI, Julich (Germany); Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany)
  6. Karlsruhe Institute of Technology, Institute for Photon Science and Synchrotron Radiation and ANKA Synchrotron Radiation Facility, Eggenstein-Leopoldshafen (Germany)
  7. European Synchrotron Radiation Facility, Grenoble (France)
  8. Univ. of Freiburg, Freiburg (Germany)
  9. Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany)
  10. Julich Center for Neutron Science (JCNS) and Peter Grunberg Institute PGI, Julich (Germany); Univ. of Liege, Liege (Belgium); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1247945
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Crystal Research and Technology
Additional Journal Information:
Journal Volume: 51; Journal Issue: 4; Journal ID: ISSN 0232-1300
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; x-ray optics; topography; sapphire; dislocations

Citation Formats

Asadchikov, Victor E., Butashin, Andrey V., Buzmakov, Alexey V., Deryabin, Alexander N., Kanevsky, Vladimir M., Prokhorov, Igor A., Roshchin, Boris S., Volkov, Yuri O., Zolotov, Dennis A., Jafari, Atefeh, Alexeev, Pavel, Cecilia, Angelica, Baumbach, Tilo, Bessas, Dimitrios, Danilewsky, Andreas N., Sergueev, Ilya, Wille, Hans -Christian, and Hermann, Raphael P. Single-crystal sapphire microstructure for high-resolution synchrotron X-ray monochromators. United States: N. p., 2016. Web. doi:10.1002/crat.201500343.
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Asadchikov, Victor E., Butashin, Andrey V., Buzmakov, Alexey V., Deryabin, Alexander N., Kanevsky, Vladimir M., Prokhorov, Igor A., Roshchin, Boris S., Volkov, Yuri O., Zolotov, Dennis A., Jafari, Atefeh, Alexeev, Pavel, Cecilia, Angelica, Baumbach, Tilo, Bessas, Dimitrios, Danilewsky, Andreas N., Sergueev, Ilya, Wille, Hans -Christian, & Hermann, Raphael P. Single-crystal sapphire microstructure for high-resolution synchrotron X-ray monochromators. United States. https://doi.org/10.1002/crat.201500343
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Asadchikov, Victor E., Butashin, Andrey V., Buzmakov, Alexey V., Deryabin, Alexander N., Kanevsky, Vladimir M., Prokhorov, Igor A., Roshchin, Boris S., Volkov, Yuri O., Zolotov, Dennis A., Jafari, Atefeh, Alexeev, Pavel, Cecilia, Angelica, Baumbach, Tilo, Bessas, Dimitrios, Danilewsky, Andreas N., Sergueev, Ilya, Wille, Hans -Christian, and Hermann, Raphael P. Tue . "Single-crystal sapphire microstructure for high-resolution synchrotron X-ray monochromators". United States. https://doi.org/10.1002/crat.201500343. https://www.osti.gov/servlets/purl/1247945.
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@article{osti_1247945,
title = {Single-crystal sapphire microstructure for high-resolution synchrotron X-ray monochromators},
author = {Asadchikov, Victor E. and Butashin, Andrey V. and Buzmakov, Alexey V. and Deryabin, Alexander N. and Kanevsky, Vladimir M. and Prokhorov, Igor A. and Roshchin, Boris S. and Volkov, Yuri O. and Zolotov, Dennis A. and Jafari, Atefeh and Alexeev, Pavel and Cecilia, Angelica and Baumbach, Tilo and Bessas, Dimitrios and Danilewsky, Andreas N. and Sergueev, Ilya and Wille, Hans -Christian and Hermann, Raphael P.},
abstractNote = {We report on the growth and characterization of several sapphire single crystals for the purpose of x-ray optics applications. Structural defects were studied by means of laboratory double-crystal X-ray diffractometry and white beam synchrotron-radiation topography. The investigations confirmed that the main defect types are dislocations. The best quality crystal was grown using the Kyropoulos technique with a dislocation density of 102-103 cm-2 and a small area with approximately 2*2 mm2 did not show dislocation contrast in many reflections and has suitable quality for application as a backscattering monochromator. As a result, a clear correlation between growth rate and dislocation density is observed, though growth rate is not the only parameter impacting the quality.},
doi = {10.1002/crat.201500343},
journal = {Crystal Research and Technology},
number = 4,
volume = 51,
place = {United States},
year = {Tue Mar 22 00:00:00 EDT 2016},
month = {Tue Mar 22 00:00:00 EDT 2016}
}
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Journal Article:
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Publisher's Version of Record
https://doi.org/10.1002/crat.201500343
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Cited by: 8 works
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Figures / Tables:

Figure 1: Figure 1:: Laboratory setup for X-­ ray topography: F – X-­ray source, M – Ge monochromator crystal, S,S1,S2 – slits, C – sample, D – point detector. The double-­slit mode enables sample curvature measurements.
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Works referenced in this record:

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Dislocation analysis for heat-exchanger method grown sapphire with white beam synchrotron X-ray topography
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    Works referencing / citing this record:

    New materials for high-energy-resolution x-ray optics
    journal, June 2017

    • Yavaş, Hasan; Sutter, John P.; Gog, Thomas
    • MRS Bulletin, Vol. 42, Issue 06
    • DOI: 10.1557/mrs.2017.94

    Rocking curve imaging of high quality sapphire crystals in backscattering geometry
    text, January 2017

    Rocking curve imaging of high quality sapphire crystals in backscattering geometry
    journal, January 2017

    • Jafari, A.; Sergueev, I.; Bessas, D.
    • Journal of Applied Physics, Vol. 121, Issue 4
    • DOI: 10.1063/1.4974106
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      Figures / Tables found in this record:

      Figure 1: (p. 3)figure
      Figure 2: (p. 3)figure
      Figure 3 (p. 3)figure
      Figure 4: (p. 4)figure
      Figure 5: (p. 4)figure
      Table 1 (p. 4)table
      Figure 6: (p. 5)figure
      Figure 7: (p. 5)figure
      Figure 8 (p. 6)figure
      Figure 10 (p. 7)figure
      Figure 9 (p. 7)figure
      Figure 11: (p. 8)figure
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