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Title: 1.5 nm fabrication of test patterns for characterization of metrological systems

Abstract

Any metrology tool is only as good as it is calibrated. The characterization of metrology systems requires test patterns at a scale about ten times smaller than the measured features. The fabrication of patterns with linewidths down to 1.5 nm is described. The test sample was designed in such a way that the distribution of linewidths appears to be random at any location. This pseudorandom test pattern is used to characterize dimensional metrology equipment over its entire dynamic range by extracting the modulation transfer function of the system. The test pattern contains alternating lines of silicon and tungsten silicide, each according to its designed width. As a result, the fabricated test samples were imaged using a transmission electron microscope, a scanning electron microscope, and an atomic force microscope. (C) 2015 American Vacuum Society.

Authors:
 [1];  [1];  [1];  [2];  [3];  [4];  [4];  [4];  [4];  [4];  [5]
  1. Abeam Technologies, Inc., Hayward, CA (United States)
  2. Argonne National Lab. (ANL), Argonne, IL (United States); Brookhaven National Lab. (BNL), Upton, NY (United States)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States)
  4. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  5. National Institute of Standards and Technology, Gaithersburg, MD (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1247541
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
Additional Journal Information:
Journal Volume: 33; Journal Issue: 6; Journal ID: ISSN 0734-211X
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; materials fabrication; modulation transfer functions; linewidths; metrology; scanning electron microscopy

Citation Formats

Babin, Sergey, Calafiore, Giuseppe, Peroz, Christophe, Conley, Raymond, Bouet, Nathalie, Cabrini, Stefano, Chan, Elaine, Lacey, Ian, McKinney, Wayne R., Yashchuk, Valeriy V., and Vladar, Andras E. 1.5 nm fabrication of test patterns for characterization of metrological systems. United States: N. p., 2015. Web. doi:10.1116/1.4935253.
Babin, Sergey, Calafiore, Giuseppe, Peroz, Christophe, Conley, Raymond, Bouet, Nathalie, Cabrini, Stefano, Chan, Elaine, Lacey, Ian, McKinney, Wayne R., Yashchuk, Valeriy V., & Vladar, Andras E. 1.5 nm fabrication of test patterns for characterization of metrological systems. United States. https://doi.org/10.1116/1.4935253
Babin, Sergey, Calafiore, Giuseppe, Peroz, Christophe, Conley, Raymond, Bouet, Nathalie, Cabrini, Stefano, Chan, Elaine, Lacey, Ian, McKinney, Wayne R., Yashchuk, Valeriy V., and Vladar, Andras E. Fri . "1.5 nm fabrication of test patterns for characterization of metrological systems". United States. https://doi.org/10.1116/1.4935253. https://www.osti.gov/servlets/purl/1247541.
@article{osti_1247541,
title = {1.5 nm fabrication of test patterns for characterization of metrological systems},
author = {Babin, Sergey and Calafiore, Giuseppe and Peroz, Christophe and Conley, Raymond and Bouet, Nathalie and Cabrini, Stefano and Chan, Elaine and Lacey, Ian and McKinney, Wayne R. and Yashchuk, Valeriy V. and Vladar, Andras E.},
abstractNote = {Any metrology tool is only as good as it is calibrated. The characterization of metrology systems requires test patterns at a scale about ten times smaller than the measured features. The fabrication of patterns with linewidths down to 1.5 nm is described. The test sample was designed in such a way that the distribution of linewidths appears to be random at any location. This pseudorandom test pattern is used to characterize dimensional metrology equipment over its entire dynamic range by extracting the modulation transfer function of the system. The test pattern contains alternating lines of silicon and tungsten silicide, each according to its designed width. As a result, the fabricated test samples were imaged using a transmission electron microscope, a scanning electron microscope, and an atomic force microscope. (C) 2015 American Vacuum Society.},
doi = {10.1116/1.4935253},
journal = {Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena},
number = 6,
volume = 33,
place = {United States},
year = {Fri Nov 06 00:00:00 EST 2015},
month = {Fri Nov 06 00:00:00 EST 2015}
}

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Works referencing / citing this record:

Modeling surface topography of state-of-the-art x-ray mirrors as a result of stochastic polishing process: recent developments
conference, September 2016

  • Yashchuk, Valeriy V.; Centers, Gary; Tyurin, Yuri N.
  • SPIE Optical Engineering + Applications, SPIE Proceedings
  • DOI: 10.1117/12.2238260