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This content will become publicly available on April 14, 2017

Title: High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces

Authors:
; ; ; ; ; ;
Publication Date:
OSTI Identifier:
1247432
Grant/Contract Number:
AR0000451
Type:
Publisher's Accepted Manuscript
Journal Name:
Semiconductor Science and Technology
Additional Journal Information:
Journal Volume: 31; Journal Issue: 6; Journal ID: ISSN 0268-1242
Publisher:
IOP Publishing
Sponsoring Org:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Country of Publication:
United Kingdom
Language:
English