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Title: Pressure-Resistant Intermediate Valence in the Kondo Insulator SmB 6

Abstract

Resonant x-ray emission spectroscopy was used to determine the pressure dependence of the f-electron occupancy in the Kondo insulator SmB6. Applied pressure reduces the f occupancy, but surprisingly, the material maintains a significant divalent character up to a pressure of at least 35 GPa. Thus, the closure of the resistive activation energy gap and onset of magnetic order are not driven by stabilization of an integer valent state. In conclusion, over the entire pressure range, the material maintains a remarkably stable intermediate valence that can in principle support a nontrivial band structure.

Authors:
 [1];  [2];  [3];  [3];  [4];  [5];  [6]
  1. Univ. of Maryland, College Park, MD (United States); National Institute of Standards and Technology, Gaithersburg, MD (United States); Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  2. Univ. of Maryland, College Park, MD (United States)
  3. Carnegie Inst. of Washington, Argonne, IL (United States)
  4. Columbia Univ., New York, NY (United States)
  5. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  6. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1379284
Alternate Identifier(s):
OSTI ID: 1247246
Grant/Contract Number:  
AC02-05CH11231; NA0001974; FG02-99ER45775; AC02-06CH11357; AC52-07NA27344
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 116; Journal Issue: 15; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Butch, Nicholas P., Paglione, Johnpierre, Chow, Paul, Xiao, Yuming, Marianetti, Chris A., Booth, Corwin H., and Jeffries, Jason R. Pressure-Resistant Intermediate Valence in the Kondo Insulator SmB6. United States: N. p., 2016. Web. doi:10.1103/PhysRevLett.116.156401.
Butch, Nicholas P., Paglione, Johnpierre, Chow, Paul, Xiao, Yuming, Marianetti, Chris A., Booth, Corwin H., & Jeffries, Jason R. Pressure-Resistant Intermediate Valence in the Kondo Insulator SmB6. United States. https://doi.org/10.1103/PhysRevLett.116.156401
Butch, Nicholas P., Paglione, Johnpierre, Chow, Paul, Xiao, Yuming, Marianetti, Chris A., Booth, Corwin H., and Jeffries, Jason R. Wed . "Pressure-Resistant Intermediate Valence in the Kondo Insulator SmB6". United States. https://doi.org/10.1103/PhysRevLett.116.156401. https://www.osti.gov/servlets/purl/1379284.
@article{osti_1379284,
title = {Pressure-Resistant Intermediate Valence in the Kondo Insulator SmB6},
author = {Butch, Nicholas P. and Paglione, Johnpierre and Chow, Paul and Xiao, Yuming and Marianetti, Chris A. and Booth, Corwin H. and Jeffries, Jason R.},
abstractNote = {Resonant x-ray emission spectroscopy was used to determine the pressure dependence of the f-electron occupancy in the Kondo insulator SmB6. Applied pressure reduces the f occupancy, but surprisingly, the material maintains a significant divalent character up to a pressure of at least 35 GPa. Thus, the closure of the resistive activation energy gap and onset of magnetic order are not driven by stabilization of an integer valent state. In conclusion, over the entire pressure range, the material maintains a remarkably stable intermediate valence that can in principle support a nontrivial band structure.},
doi = {10.1103/PhysRevLett.116.156401},
journal = {Physical Review Letters},
number = 15,
volume = 116,
place = {United States},
year = {Wed Apr 13 00:00:00 EDT 2016},
month = {Wed Apr 13 00:00:00 EDT 2016}
}

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Cited by: 24 works
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Works referencing / citing this record:

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