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This content will become publicly available on June 17, 2017

Title: Defect creation in InGaAs/GaAs multiple quantum wells–I. Structural properties

Authors:
; ; ;
Publication Date:
OSTI Identifier:
1246377
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 425; Journal Issue: C; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Country of Publication:
Netherlands
Language:
English