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Title: Ultrafast and band-selective Auger recombination in InGaN quantum wells

Abstract

In InGaN quantum well based light-emitting diodes, Auger recombination is believed to limit the quantum efficiency at high injection currents. Here in this paper, we report the direct observation of carrier loss from Auger recombination on a sub-picosecond timescale in a single InGaN quantum well using time-resolved photoemission. Selective excitations of different valence sub-bands reveal that the Auger rate constant decreases by two orders of magnitude as the effective hole mass decreases, confirming the critical role of momentum conservation.

Authors:
 [1]; ORCiD logo [1];  [2];  [2];  [1]
+ Show Author Affiliations
  1. Columbia Univ., New York, NY (United States). Dept. of Chemistry
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1370402
Alternate Identifier(s):
OSTI ID: 1245500
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 14; Related Information: SSLS partners with Sandia National Laboratories (lead); California Institute of Technology; University of California, Irvine, Merced, and Santa Barbara; Los Alamos National Laboratory; University of New Mexico; Northwestern University; Philips Lumileds Lighting; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Williams, Kristopher W., Monahan, Nicholas R., Koleske, Daniel D., Crawford, Mary H., and Zhu, X. -Y. Ultrafast and band-selective Auger recombination in InGaN quantum wells. United States: N. p., 2016. Web. doi:10.1063/1.4945669.
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Williams, Kristopher W., Monahan, Nicholas R., Koleske, Daniel D., Crawford, Mary H., & Zhu, X. -Y. Ultrafast and band-selective Auger recombination in InGaN quantum wells. United States. https://doi.org/10.1063/1.4945669
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Williams, Kristopher W., Monahan, Nicholas R., Koleske, Daniel D., Crawford, Mary H., and Zhu, X. -Y. Tue . "Ultrafast and band-selective Auger recombination in InGaN quantum wells". United States. https://doi.org/10.1063/1.4945669. https://www.osti.gov/servlets/purl/1370402.
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@article{osti_1370402,
title = {Ultrafast and band-selective Auger recombination in InGaN quantum wells},
author = {Williams, Kristopher W. and Monahan, Nicholas R. and Koleske, Daniel D. and Crawford, Mary H. and Zhu, X. -Y.},
abstractNote = {In InGaN quantum well based light-emitting diodes, Auger recombination is believed to limit the quantum efficiency at high injection currents. Here in this paper, we report the direct observation of carrier loss from Auger recombination on a sub-picosecond timescale in a single InGaN quantum well using time-resolved photoemission. Selective excitations of different valence sub-bands reveal that the Auger rate constant decreases by two orders of magnitude as the effective hole mass decreases, confirming the critical role of momentum conservation.},
doi = {10.1063/1.4945669},
journal = {Applied Physics Letters},
number = 14,
volume = 108,
place = {United States},
year = {Tue Apr 05 00:00:00 EDT 2016},
month = {Tue Apr 05 00:00:00 EDT 2016}
}
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Journal Article:
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https://doi.org/10.1063/1.4945669
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Works referenced in this record:

Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies
journal, August 2013

  • Verzellesi, Giovanni; Saguatti, Davide; Meneghini, Matteo
  • Journal of Applied Physics, Vol. 114, Issue 7
  • DOI: 10.1063/1.4816434

Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes
journal, April 2011

  • Kioupakis, Emmanouil; Rinke, Patrick; Delaney, Kris T.
  • Applied Physics Letters, Vol. 98, Issue 16
  • DOI: 10.1063/1.3570656

Auger recombination in InGaN measured by photoluminescence
journal, October 2007

  • Shen, Y. C.; Mueller, G. O.; Watanabe, S.
  • Applied Physics Letters, Vol. 91, Issue 14
  • DOI: 10.1063/1.2785135

Transition from electron accumulation to depletion at InGaN surfaces
journal, November 2006

  • Veal, T. D.; Jefferson, P. H.; Piper, L. F. J.
  • Applied Physics Letters, Vol. 89, Issue 20
  • DOI: 10.1063/1.2387976

Efficiency droop in light-emitting diodes: Challenges and countermeasures: Efficiency droop in light-emitting diodes: Challenges and countermeasures
journal, January 2013

  • Cho, Jaehee; Schubert, E. Fred; Kim, Jong Kyu
  • Laser & Photonics Reviews, Vol. 7, Issue 3
  • DOI: 10.1002/lpor.201200025

Ultrafast scattering processes of hot electrons in InSb studied by time- and angle-resolved photoemission spectroscopy
journal, January 2015

Picosecond carrier dynamics and studies of Auger recombination processes in indium arsenide at room temperature
journal, November 1992

Origin of electrons emitted into vacuum from InGaN light emitting diodes
journal, August 2014

  • Iveland, Justin; Piccardo, Marco; Martinelli, Lucio
  • Applied Physics Letters, Vol. 105, Issue 5
  • DOI: 10.1063/1.4892473

On the origin of IQE-‘droop’ in InGaN LEDs
journal, May 2009

  • Laubsch, Ansgar; Sabathil, Matthias; Bergbauer, Werner
  • physica status solidi (c), Vol. 6, Issue S2
  • DOI: 10.1002/pssc.200880950

Efficiency droop in nitride-based light-emitting diodes
journal, July 2010

Direct Observation of Entropy-Driven Electron-Hole Pair Separation at an Organic Semiconductor Interface
journal, June 2015

On the uncertainty of the Auger recombination coefficient extracted from InGaN/GaN light-emitting diode efficiency droop measurements
journal, March 2015

  • Piprek, Joachim; Römer, Friedhard; Witzigmann, Bernd
  • Applied Physics Letters, Vol. 106, Issue 10
  • DOI: 10.1063/1.4914833

Looking for Auger signatures in III-nitride light emitters: A full-band Monte Carlo perspective
journal, February 2015

  • Bertazzi, Francesco; Goano, Michele; Zhou, Xiangyu
  • Applied Physics Letters, Vol. 106, Issue 6
  • DOI: 10.1063/1.4908154

LEDs for Solid-State Lighting: Performance Challenges and Recent Advances
journal, July 2009

Origin of efficiency droop in GaN-based light-emitting diodes
journal, October 2007

  • Kim, Min-Ho; Schubert, Martin F.; Dai, Qi
  • Applied Physics Letters, Vol. 91, Issue 18
  • DOI: 10.1063/1.2800290

Electron Dynamics at the ZnO (101̅0) Surface
journal, July 2008

  • Tisdale, William A.; Muntwiler, Matthias; Norris, David J.
  • The Journal of Physical Chemistry C, Vol. 112, Issue 37
  • DOI: 10.1021/jp802455p

Identifying the cause of the efficiency droop in GaInN light-emitting diodes by correlating the onset of high injection with the onset of the efficiency droop
journal, June 2013

  • Meyaard, David S.; Lin, Guan-Bo; Cho, Jaehee
  • Applied Physics Letters, Vol. 102, Issue 25
  • DOI: 10.1063/1.4811558

Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes
journal, October 2011

  • Cheetham, K. J.; Krier, A.; Marko, I. P.
  • Applied Physics Letters, Vol. 99, Issue 14
  • DOI: 10.1063/1.3646910

How to decide between competing efficiency droop models for GaN-based light-emitting diodes
journal, July 2015

Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes
journal, June 2004

  • Gan, Kian-Giap; Sun, Chi-Kuang; DenBaars, Steven P.
  • Applied Physics Letters, Vol. 84, Issue 23
  • DOI: 10.1063/1.1760211
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    Works referencing / citing this record:

    Reconstructing charge-carrier dynamics in porous silicon membranes from time-resolved interferometric measurements
    journal, November 2018

    Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap
    journal, October 2016

    • Nippert, Felix; Karpov, Sergey Yu.; Callsen, Gordon
    • Applied Physics Letters, Vol. 109, Issue 16
    • DOI: 10.1063/1.4965298

    Photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires
    journal, April 2017

    • Alfaraj, Nasir; Mitra, Somak; Wu, Feng
    • Applied Physics Letters, Vol. 110, Issue 16
    • DOI: 10.1063/1.4981252

    The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes
    journal, December 2017

    • Hopkins, M. A.; Allsopp, D. W. E.; Kappers, M. J.
    • Journal of Applied Physics, Vol. 122, Issue 23
    • DOI: 10.1063/1.4986434

    A comparative study of photoluminescence internal quantum efficiency determination method in InGaN/GaN multi-quantum-wells
    journal, October 2017

    • Xing, Yuchen; Wang, Lai; Wang, Zilan
    • Journal of Applied Physics, Vol. 122, Issue 13
    • DOI: 10.1063/1.5005619

    Ultrafast bulk carrier dynamics in various GaN crystals at near-infrared wavelengths under one- and two-photon absorption
    journal, March 2019

    • Fang, Yu; Yang, Junyi; Xiao, Zhengguo
    • Applied Physics Letters, Vol. 114, Issue 11
    • DOI: 10.1063/1.5089108

    The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes
    text, January 2017

    • Hopkins, Ma; Allsopp, Dwe; Kappers, Menno
    • Apollo - University of Cambridge Repository
    • DOI: 10.17863/cam.20819

    Reconstructing charge-carrier dynamics in porous silicon membranes from time-resolved interferometric measurements
    journal, November 2018

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