Investigation of spin-gapless semiconductivity and half-metallicity in Ti2MnAl-based compounds
Abstract
The increasing interest in spin-based electronics has led to a vigorous search for new materials that can provide a high degree of spin polarization in electron transport. An ideal candidate would act as an insulator for one spin channel and a conductor or semiconductor for the opposite spin channel, corresponding to the respective cases of half-metallicity and spin-gapless semiconductivity. Our first-principle electronic-structure calculations indicate that the metallic Heusler compound Ti2MnAl becomes half-metallic and spin-gapless semiconducting if half of the Al atoms are replaced by Sn and In, respectively. These electronic structures are associated with structural transitions from the regular cubic Heusler structure to the inverted cubic Heusler structure.
- Authors:
-
- Univ. of Northern Iowa, Cedar Falls, IA (United States). Dept. of Physics
- Univ. of Nebraska, Lincoln, NE (United States). Nebraska Center for Materials and Nanoscience; South Dakota State Univ., Brookings, SD (United States). Dept. of Physics
- South Dakota State Univ., Brookings, SD (United States). Dept. of Physics
- Univ. of Nebraska, Lincoln, NE (United States). Nebraska Center for Materials and Nanoscience
- Univ. of Nebraska, Lincoln, NE (United States). Nebraska Center for Materials and Nanoscience and Dept. of Physics and Astronomy
- South Dakota State Univ., Brookings, SD (United States). Dept. of Physics; Hohai Univ., Jiangsu (China). College of Mechanical and Electrical Engineering
- Publication Date:
- Research Org.:
- Univ. of Nebraska, Lincoln, NE (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
- OSTI Identifier:
- 1469706
- Alternate Identifier(s):
- OSTI ID: 1245497; OSTI ID: 1469703
- Grant/Contract Number:
- FG02-04ER46152; NNCI: 1542182
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 108; Journal Issue: 14; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 74 ATOMIC AND MOLECULAR PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Lukashev, P., Kharel, P., Gilbert, S., Staten, B., Hurley, N., Fuglsby, R., Huh, Y., Valloppilly, S., Zhang, W., Yang, K., Skomski, R., and Sellmyer, D. J. Investigation of spin-gapless semiconductivity and half-metallicity in Ti2MnAl-based compounds. United States: N. p., 2016.
Web. doi:10.1063/1.4945600.
Lukashev, P., Kharel, P., Gilbert, S., Staten, B., Hurley, N., Fuglsby, R., Huh, Y., Valloppilly, S., Zhang, W., Yang, K., Skomski, R., & Sellmyer, D. J. Investigation of spin-gapless semiconductivity and half-metallicity in Ti2MnAl-based compounds. United States. https://doi.org/10.1063/1.4945600
Lukashev, P., Kharel, P., Gilbert, S., Staten, B., Hurley, N., Fuglsby, R., Huh, Y., Valloppilly, S., Zhang, W., Yang, K., Skomski, R., and Sellmyer, D. J. Mon .
"Investigation of spin-gapless semiconductivity and half-metallicity in Ti2MnAl-based compounds". United States. https://doi.org/10.1063/1.4945600. https://www.osti.gov/servlets/purl/1469706.
@article{osti_1469706,
title = {Investigation of spin-gapless semiconductivity and half-metallicity in Ti2MnAl-based compounds},
author = {Lukashev, P. and Kharel, P. and Gilbert, S. and Staten, B. and Hurley, N. and Fuglsby, R. and Huh, Y. and Valloppilly, S. and Zhang, W. and Yang, K. and Skomski, R. and Sellmyer, D. J.},
abstractNote = {The increasing interest in spin-based electronics has led to a vigorous search for new materials that can provide a high degree of spin polarization in electron transport. An ideal candidate would act as an insulator for one spin channel and a conductor or semiconductor for the opposite spin channel, corresponding to the respective cases of half-metallicity and spin-gapless semiconductivity. Our first-principle electronic-structure calculations indicate that the metallic Heusler compound Ti2MnAl becomes half-metallic and spin-gapless semiconducting if half of the Al atoms are replaced by Sn and In, respectively. These electronic structures are associated with structural transitions from the regular cubic Heusler structure to the inverted cubic Heusler structure.},
doi = {10.1063/1.4945600},
journal = {Applied Physics Letters},
number = 14,
volume = 108,
place = {United States},
year = {Mon Apr 04 00:00:00 EDT 2016},
month = {Mon Apr 04 00:00:00 EDT 2016}
}
Web of Science
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