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Title: New Flexible Channels for Room Temperature Tunneling Field Effect Transistors

Tunneling field effect transistors (TFETs) have been proposed to overcome the fundamental issues of Si based transistors, such as short channel effect, finite leakage current, and high contact resistance. Unfortunately, most if not all TFETs are operational only at cryogenic temperatures. Here we report that iron (Fe) quantum dots functionalized boron nitride nanotubes (QDs-BNNTs) can be used as the flexible tunneling channels of TFETs at room temperatures. The electrical insulating BNNTs are used as the one-dimensional (1D) substrates to confine the uniform formation of Fe QDs on their surface as the flexible tunneling channel. Consistent semiconductor-like transport behaviors under various bending conditions are detected by scanning tunneling spectroscopy in a transmission electron microscopy system (insitu STM-TEM). Ultimately, as suggested by computer simulation, the uniform distribution of Fe QDs enable an averaging effect on the possible electron tunneling pathways, which is responsible for the consistent transport properties that are not sensitive to bending.
Authors:
 [1] ;  [2] ;  [3] ;  [3] ;  [1] ;  [1] ;  [1] ;  [1]
  1. Michigan Technological Univ., Houghton, MI (United States). Dept. of Physics
  2. Michigan Technological Univ., Houghton, MI (United States). Dept. of Materials Science and Engineering
  3. Michigan Technological Univ., Houghton, MI (United States). Dept. of Electrical and Computer Engineering
Publication Date:
OSTI Identifier:
1242363
Grant/Contract Number:
SC0012762
Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 6; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Research Org:
Michigan Technological Univ., Houghton, MI (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS