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This content will become publicly available on March 9, 2017

Title: Efficiency enhancement in InAs/GaAsSb quantum dot solar cells with GaP strain compensation layer

Authors:
 [1] ;  [2] ;  [2] ;  [1] ;  [1] ;  [2]
  1. Division of Industrial Metrology, Korea Research Institute of Standards and Science, Daejeon 305-340, South Korea
  2. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA
Publication Date:
OSTI Identifier:
1241416
Grant/Contract Number:
EEC-1041895
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 10; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English