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Title: Excitonic effects in two-dimensional semiconductors: Path integral Monte Carlo approach

Abstract

The most striking features of novel two-dimensional semiconductors (e.g., transition metal dichalcogenide monolayers or phosphorene) is a strong Coulomb interaction between charge carriers resulting in large excitonic effects. In particular, this leads to the formation of multicarrier bound states upon photoexcitation (e.g., excitons, trions, and biexcitons), which could remain stable at near-room temperatures and contribute significantly to the optical properties of such materials. In our work we have used the path integral Monte Carlo methodology to numerically study properties of multicarrier bound states in two-dimensional semiconductors. Specifically, we have accurately investigated and tabulated the dependence of single-exciton, trion, and biexciton binding energies on the strength of dielectric screening, including the limiting cases of very strong and very weak screening. Our results of this work are potentially useful in the analysis of experimental data and benchmarking of theoretical and computational models.

Authors:
 [1];  [1]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Publication Date:
Research Org.:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States); Energy Frontier Research Centers (EFRC) (United States). Center for Advanced Solar Photophysics (CASP)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1240611
Alternate Identifier(s):
OSTI ID: 1225760
Report Number(s):
LA-UR-15-23355
Journal ID: ISSN 1098-0121; PRBMDO
Grant/Contract Number:  
AC52-06NA25396
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 92; Journal Issue: 19; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; Material Science; 2D semiconductor, exciton, trion, biexciton, quantum monte carlo

Citation Formats

Velizhanin, Kirill A., and Saxena, Avadh. Excitonic effects in two-dimensional semiconductors: Path integral Monte Carlo approach. United States: N. p., 2015. Web. doi:10.1103/PhysRevB.92.195305.
Velizhanin, Kirill A., & Saxena, Avadh. Excitonic effects in two-dimensional semiconductors: Path integral Monte Carlo approach. United States. https://doi.org/10.1103/PhysRevB.92.195305
Velizhanin, Kirill A., and Saxena, Avadh. Wed . "Excitonic effects in two-dimensional semiconductors: Path integral Monte Carlo approach". United States. https://doi.org/10.1103/PhysRevB.92.195305. https://www.osti.gov/servlets/purl/1240611.
@article{osti_1240611,
title = {Excitonic effects in two-dimensional semiconductors: Path integral Monte Carlo approach},
author = {Velizhanin, Kirill A. and Saxena, Avadh},
abstractNote = {The most striking features of novel two-dimensional semiconductors (e.g., transition metal dichalcogenide monolayers or phosphorene) is a strong Coulomb interaction between charge carriers resulting in large excitonic effects. In particular, this leads to the formation of multicarrier bound states upon photoexcitation (e.g., excitons, trions, and biexcitons), which could remain stable at near-room temperatures and contribute significantly to the optical properties of such materials. In our work we have used the path integral Monte Carlo methodology to numerically study properties of multicarrier bound states in two-dimensional semiconductors. Specifically, we have accurately investigated and tabulated the dependence of single-exciton, trion, and biexciton binding energies on the strength of dielectric screening, including the limiting cases of very strong and very weak screening. Our results of this work are potentially useful in the analysis of experimental data and benchmarking of theoretical and computational models.},
doi = {10.1103/PhysRevB.92.195305},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 19,
volume = 92,
place = {United States},
year = {Wed Nov 11 00:00:00 EST 2015},
month = {Wed Nov 11 00:00:00 EST 2015}
}

Journal Article:

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Cited by: 47 works
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