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Title: Electronic transport through Al/InN nanowire/Al junctions

We report non-linear electronic transport measurement of Al/Si-doped n-type InN nanowire/Al junctions performed at T = 0.3 K, below the superconducting transition temperature of the Al electrodes. The proximity effect is observed in these devices through a strong dip in resistance at zero bias. In addition to the resistance dip at zero bias, several resistance peaks can be identified at bias voltages above the superconducting gap of the electrodes, while no resistance dip is observed at the superconducting gap. The resistance peaks disappear as the Al electrodes turn normal beyond the critical magnetic field except one which remains visible at fields several times higher than critical magnetic field. An unexpected non-monotonic magnetic field dependence of the peak position is observed. As a result, we discuss the physical origin of these observations and propose that the resistance peaks could be the McMillan-Rowell oscillations arising from different closed paths localized near different regions of the junctions.
Authors:
 [1] ;  [1] ;  [1] ;  [2] ;  [2]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. McGill Univ., Montreal, QC (Canada)
Publication Date:
OSTI Identifier:
1239365
Report Number(s):
SAND2016-0883J
Journal ID: ISSN 0003-6951; APPLAB; 619001
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 6; Journal ID: ISSN 0003-6951
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY