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Title: Current–voltage characteristics of organic heterostructure devices with insulating spacer layers

The dark current density in donor/acceptor organic planar heterostructure devices at a given forward voltage bias can either increase or decrease when an insulating spacer layer is added between the donor and acceptor layers. The dominant current flow process in these systems involves the formation and subsequent recombination of interfacial exciplex states. If the exciplex recombination rate limits current flow, an insulating interface layer decreases the dark current. However, if the exciplex formation rate limits the current, an insulating interface layer may increase the dark current. As a result, we present a device model to describe this behavior, and we discuss relevant experimental data.
Authors:
 [1] ;  [2] ;  [2] ;  [2] ;  [3] ;  [3]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Shandong Univ., Jinan (China)
  2. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  3. Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Univ. of Minnesota, Minneapolis, MN (United States)
Publication Date:
OSTI Identifier:
1239309
Report Number(s):
LA-UR-14-28714
Journal ID: ISSN 1566-1199
Grant/Contract Number:
AC52-06NA25396
Type:
Accepted Manuscript
Journal Name:
Organic Electronics
Additional Journal Information:
Journal Volume: 24; Journal Issue: C; Journal ID: ISSN 1566-1199
Research Org:
Los Alamos National Laboratory (LANL)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
25 ENERGY STORAGE; 36 MATERIALS SCIENCE Material Science; Organic heterostructure; Insulating spacer layer; Current-voltage characteristics