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This content will become publicly available on February 24, 2017

Title: 2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures

Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [1]
  1. Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA, Berkeley Sensor and Actuator Center, University of California, Berkeley, California 94720, USA
  2. Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA
Publication Date:
OSTI Identifier:
1239172
Grant/Contract Number:
SC0004993
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 8; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English